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参数资料
| 型号： | TMBAT49 |
| 厂商： | 意法半导体 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 连接器附件 |
| 文件页数： | 1/4页 |
| 文件大小： | 70K |
| 代理商： | TMBAT49 |
TMBAT 49
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
August 1999 Ed 1A
MELF
(Glass)
Symbol
V
RRM
I
F
I
FRM
Parameter
Value
80
500
3
Unit
V
mA
A
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
T
i
= 70
°
C
tp = 1s
δ
≤
0.5
t
p
= 10ms
I
FSM
T
stg
T
j
T
L
Surge non Repetitive Forward Current
Storage and Junction Temperature Range
10
A
°
C
°
C
°
C
- 65 to + 150
- 65 to + 125
260
Maximum Temperature for Soldering during 15s
ABSOLUTE MAXIMUM RATINGS
(limiting values)
Symbol
R
th(j-l)
Test Conditions
Value
110
Unit
°
C/W
Junction-leads
THERMAL RESISTANCE
* Pulse test: t
p
≤
300
μ
s
δ
<
2%
.
Symbol
I
R
*
V
F
*
Test Conditions
V
R
= 80V
I
F
= 10mA
I
F
= 100mA
I
F
= 1A
Min.
Typ.
Max.
200
0.32
0.42
1
Unit
μ
A
V
T
j
= 25
°
C
T
j
= 25
°
C
T
j
= 25
°
C
T
j
= 25
°
C
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
C
Test Conditions
Min.
Typ.
120
35
Max.
Unit
pF
T
j
= 25
°
C f = 1MHz
V
R
= 0V
V
R
= 5V
DYNAMIC CHARACTERISTICS
1/4
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