参数资料
型号: TMPN3120E1M
厂商: Toshiba Corporation
英文描述: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
中文描述: 东芝的CMOS数字集成电路硅单片
文件页数: 6/8页
文件大小: 175K
代理商: TMPN3120E1M
TMPN3120E1M
2001-02-21 6/8
ITEM
SYMBOL
TYP.
MAX
UNIT
10 MHz
Clock
17
30
5 MHz
Clock
9
15
2.5 MHz Clock
6
8
1.25 MHz Clock
4
5
Operating
Mode
Current
Consumption
0.625 MHz Clock
I
DD (OP)
2
3
mA
Sleep Mode Current
Consumption
I
DD (SLP)
16
100
μA
Note: Test conditions for current dissipation
V
DD
=5V, all output=with no load, all input=0.2V or below or V
DD
0.2V, programmable pull-up=off, crystal
oscillator clock input, differential receiver disabled.
The current value ( typ. ) is a typical value when Ta=25°C.
The current value ( max ) applies to the rated temperature range at V
DD
=5.5V.
200μA ( typ. ) to 600μA ( max ) is added to the current of the differential receiver when the receiver is
enabled.
The differential receiver is enabled by either of the following conditions :
When the Neuron chip is in Run mode and the communication ports are in Differential mode.
When the Neuron chip is in Sleep mode, the communication ports are in Differential mode, and the
Comm Port Wakeup is not masked.
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