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TN4Q04
No.0000-1/4
Features
Original control IC for Quasi-resonant type.
High voltage Power MOSFET with current sense.
Low input voltage protection (Automatic reset)
Over voltage protection (Latch).
Over current protection (Pulse-by-pulse).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
unit
[The voltage parameters indicate the GND pin voltage]
Drain-to-Source Voltage
VDSS
3-5
450
V
Drain Current (DC)
ID
3-5
6.5
A
Drain Current (Pulse)
IDP
3-5
PW≤10s, duty cycle≤1%
26
A
VDD Pin Apply Voltage
VDD
4-5
--0.3 to 16.7
V
FB Pin Apply Voltage
VFB
1-5
--0.3 to VDD+0.3
V
EDGE Pin Apply Voltage
VEDGE
2-5
--0.3 to VDD+0.3
V
Allowable Power Dissipation
PD
2W
Tc=25°C35
W
Operating Temperature
Topr
--25 to +125
°C
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
3-5
220
mJ
Avalanche Current *2
IAV
3-5
6.5
A
*1 VDD=50V, L=10mH, IAV=6.5A
*2 L
≤10mH, single pulse
30905IQ TS IM NOGUCHI
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TN4Q04
ExPD (Excellent Power Device)
Quasi-Resonant Switching
Power Supply ExPD
Ordering number : ENN0000
Preliminary