1
FEATURES
APPLICATIONS
SEE ALSO
DESCRIPTION
APPLICATION CIRCUIT
_
+
IN-
IN+
PWM
H-
Bridge
VO+
VO-
Internal
Oscillator
CS
ToBattery
VDD
GND
Bias
Circuitry
RI
+
-
Differential
Input
TPA2010D1
SHUTDOWN
A1
A2
A3
B1
B2
B3
C1
C2
C3
IN+
GND
VO-
VDD
PVDD
GND
IN-
SHUTDOWN VO+
1,55mm
9-BALL
WAFERCHIPSCALE
YZF,YEFPACKAGES
TPA2010D1DIMENSIONS
(TOPVIEWOFPCB)
Note:PinA1ismarkedwitha “0” for
Pb-free(YZF)anda “1” forSnPb(YEF).
1,40mm
1,55mm
1,40mm
SLOS417C – OCTOBER 2003 – REVISED SEPTEMBER 2007
www.ti.com
2.5-W MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER
Wireless or Cellular Handsets and PDAs
2
Maximum Battery Life and Minimum Heat
Personal Navigation Devices
–
Efficiency With an 8-
Speaker:
General Portable Audio Devices
–
88% at 400 mW
Linear Vibrator Drivers
–
80% at 100 mW
–
2.8-mA Quiescent Current
–
0.5-
μA Shutdown Current
TPA2032D1, TPA2033D1, TPA2034D1
Only Three External Components
–
Optimized PWM Output Stage Eliminates
LC Output Filter
The
TPA2010D1
(sometimes
referred
to
as
–
Internally Generated 250-kHz Switching
TPA2010) is a 2.5-W high efficiency filter-free class-D
Frequency Eliminates Capacitor and
audio power amplifier (class-D amp) in a 1,45 mm
×
1,45 mm wafer chip scale package (WCSP) that
Resistor
requires only three external components.
–
Improved PSRR (–75 dB) and Wide Supply
Voltage (2.5 V to 5.5 V) Eliminates Need for
Features
like
88%
efficiency,
–75-dB
PSRR,
a Voltage Regulator
improved RF-rectification immunity, and 8 mm2 total
PCB area make the TPA2010D1 (TPA2010) class-D
–
Fully Differential Design Reduces RF
amp ideal for cellular handsets. A fast start-up time of
Rectification and Eliminates Bypass
1 ms with minimal pop makes the TPA2010D1
Capacitor
(TPA2010) ideal for PDA applications.
–
Improved CMRR Eliminates Two Input
In cellular handsets, the earpiece, speaker phone,
Coupling Capacitors
and melody ringer can each be driven by the
Wafer Chip Scale Packaging (WCSP)
TPA2010D1. The TPA2010D1 allows independent
–
NanoFree Lead-Free (YZF)
gain while summing signals from seperate sources,
and has a low 36
μV noise floor, A-weighted.
–
NanoStar SnPb (YEF)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NanoFree, NanoStar are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright 2003–2007, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.