参数资料
型号: TPC30HM3/86A
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: TVS 1.5KW 30V 5% SMPC
标准包装: 1,500
系列: eSMP™
电压 - 反向隔离(标准值): 24.3V
电压 - 击穿: 27V
功率(瓦特): 1500W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: TO-277,3-PowerDFN
供应商设备封装: TO-277A
包装: 带卷 (TR)
TPC6.8 thru TPC51A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR ? Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
eSMP ? Series
FEATURES
? Junction passivation
optimized design
passivated anisotropic rectifier technology
A
2
TO-277A (SMPC)
1
? T J = 185 °C capability suitable for high reliability
and automotive requirement
? Very low profile - typical height of 1.1 mm
? Ideal for automated placement
? Uni-direction only
? Excellent clamping capability
A
Anode
Cathode 1
Cathode 2
? Low incremental surge resistance
? Very fast response time
? Meets MSL level 1, per J-STD-020
PRIMARY CHARACTERISTICS
? AEC-Q101 qualified
V WM
V BR
P PPM
T J max.
Polarity
Package
TYPICAL APPLICATIONS
5.50 V to 43.6 V
6.8 V to 51 V
1500 W
185 °C
Uni-directional
TO-277A (SMPC)
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
per
MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
SYMBOL
P PPM
I PPM
VALUE
1500
See next table
UNIT
W
A
Peak forward surge current 8.3 ms single half sine-wave
Maximum instantaneous forward voltage at 100 A (3)
Operating junction and storage temperature range
(2)
I FSM
V F
T J , T STG
200
3.5
- 65 to + 185
A
V
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T
A = 25 °C per fig. 2
(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 21-Sep-12
1
Document Number: 89056
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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