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参数资料
| 型号： | TPD12S521DBTR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 消费家电 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, PDSO38 |
| 封装： | GREEN, PLASTIC, TSSOP-38 |
| 文件页数： | 9/12页 |
| 文件大小： | 644K |
| 代理商： | TPD12S521DBTR |
ELECTRICAL CHARACTERISTICS
SLVS639B – OCTOBER 2007 – REVISED APRIL 2009 .................................................................................................................................................... www.ti.com
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
ICC5
Operating supply current
5V_SUPPLY = 5 V
110
130
A
ICC3
Bias supply current
LV_SUPPLY = 3.3 V
1
5
A
VDROP
5V_OUT overcurrent output drop
5V_SUPPLY = 5 V, IOUT = 55 mA
150
200
mV
ISC
5V_OUT short-circuit current limit
5V_SUPPLY= 5 V, 5V_OUT = GND
90
135
175
mA
OFF-state leakage current,
IOFF
LV_SUPPLY = 0 V
0.1
5
A
level-shifting NFET
TMDS_D[2:0]+/–,
TMDS_CK+/–,
CE_REMOTE_OUT,
Current conducted from output pins to
IBACKDRIVE
5V_SUPPLY < VCH_OUT DDC_DAT_OUT,
0.1
5
A
V_SUPPLY rails when powered down
DDC_CLK_OUT,
HOTPLUG_DET_OUT,
5V_OUT
Voltage drop across level-shifting NFET
VON
LV_SUPPLY = 2.5 V, VS = GND, IDS = 3 mA
75
95
140
mV
when ON
Top diode
0.85
IF = 8 mA,
VF
Diode forward voltage
V
TA = 25°C
(1)
Bottom diode
0.85
Pins 4, 7, 10, 13, 20–24, 27, 30, 33(1)(2)
IEC
±8
VESD
ESD withstand voltage
kV
Pins 1, 2, 16–19, 37, 38(1)(3)
HBM
±2
Positive transients
9
Channel clamp voltage
VCL
TA = 25°C
(1) (3)
V
at ±8-kV HBM ESD
Negative transients
–9
Positive transients
3
RDYN
Dynamic resistance
I = 1 A, TA = 25°C
(4)
Negative transients
1.5
ILEAK
TMDS channel leakage current
TA = 25°C
(1)
0.01
1
A
CIN,
5V_SUPPLY= 5 V, Measured at 1 MHz,
TMDS channel input capacitance
0.8
1.0
pF
TMDS
VBIAS = 2.5 V
(1)
ΔCIN,
TMDS channel input capacitance
5V_SUPPLY= 5 V, Measured at 1 MHz,
0.05
pF
TMDS
matching
VBIAS = 2.5 V
(1) (5)
Mutual capacitance between signal pin
5V_SUPPLY= 0 V, Measured at 1 MHz,
CMUTUAL
0.07
pF
and adjacent signal pin
VBIAS = 2.5 V
(1)
DDC
3.5
4
Level-shifting input capacitance,
5V_SUPPLY= 0 V, Measured at 100 KHz,
CIN
CEC
3.5
4
pF
capacitance to GND
VBIAS = 2.5 V
(1)
HP
3.5
4
(1)
This parameter is specified by design and verified by device characterization.
(2)
Standard IEC 61000-4-2, CDISCHARGE = 150 pF, RDISCHARGE = 330
(3)
Human-Body Model (HBM) per MIL-STD-883, Method 3015, CDISCHARGE = 100 pF, RDISCHARGE = 1.5 k
(4)
These measurements performed with no external capacitor on ESD_BYP.
(5)
Intrapair matching, each TMDS pair (i.e., D+, D–)
6
Copyright 2007–2009, Texas Instruments Incorporated
Product Folder Link(s): TPD12S521
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