参数资料
型号: TPD7210F
元件分类: 运动控制电子
英文描述: BRUSHLESS DC MOTOR CONTROLLER, 1 A, PDSO24
封装: 0.300 INCH, 1 MM PITCH, PLASTIC, SSOP-24
文件页数: 16/17页
文件大小: 285K
代理商: TPD7210F
TPD7210F
2008-05-12
8
Characteristic
Symbol
Test
Circuit
Condition
Min
Typ.
Max
Unit
Remarks
Detection
VDDUV
5.0
5.5
6.0
Under-
voltage
detection
Hysteresis
VDDUV
0.5
V
Under voltage detection
voltage and hysteresis
(VDD voltage detected)
Turn-on
delay
time
td (ON)
0.25
1
Turn-on
time
tON
0.5
2
Turn-off
delay
time
td (OFF)
0.25
1
Switching
times
Turn-off
time
tOFF
1
VDD = 13.5 V,
VCPV = 13.5 V,
COUT = 12400 pF,
RG = 47
0.5
2
μs
UU, VU, WU, UB, VB
and WB switching
times
Dead time (Note 6)
tdead
VDD = 13.5 V,
tdead = tOFF td(ON)
0.25
1
μs
Oscillating frequency
fOSC
VDD = 7 to 18V,
ROSC = 62 k,
COSC = 270 pF
80
100
120
kHz
FAULT output voltage
VFAULT
VDD = 7 to 18 V,
IFAULT = 1 mA
0.8
V
FAULT pin lowlevel
voltage (opendrain)
FAULT output
leakage current
IFAULT
VDD = 7 to 18 V,
VFAULT = 18 V
10
μA
FAULT output
delay time
td(FAULT)
1
μs
Note3 : On-off output control, FAULT output and charge pump circuit operate from VDD ≥ 4.5V. However, charge
pump voltage (CPV voltage) decreases by there are a lot of output currents in the condition with a low power
supply voltage (VDD). It may be not enough voltage (VGS) to drive external power MOSFET. Be careful
enough when using it .
Note4 : When converting foward voltage of the charge pump circuit diode by 0.7V. Please use the diode of
high-speed type (trr
≤ 100ns).
Note5 : About the charge pump voltage
So as not to apply over-voltage to the gate-source voltage(VGS) of external power MOSFET, and so as to
become the best driving voltage,the clamping circuit is built into. When the CPV voltage reaches the value,
so as not to apply over-voltage, the oscillation logic circuit of the charge pump is stopped.
CPV
volt
age
VDD voltage →
3×VDD - 3×VF@VIN1 to VIN6 = 0V (VF: diode forward voltage)
CPV voltage
Area①:VCPV=3×VDD - 3×VF
Area②:VCPV clamp=VDD + 14V typ.
Area③:VCPV clamp=32.5V typ. (35V max)
(8)
(18)
4.5
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