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参数资料
| 型号： | TPS2010PWRG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14 |
| 封装： | GREEN, TSSOP-14 |
| 文件页数： | 17/21页 |
| 文件大小： | 553K |
| 代理商： | TPS2010PWRG4 |
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions
MIN
MAX
UNIT
Input voltage, VI(IN)
2.7
5.5
V
Input voltage, VI at EN
0
5.5
V
TPS2010
0
0.2
Continuous output current IO
TPS2011
0
0.6
A
Continuous output current, IO
TPS2012
0
1
A
TPS2013
0
1.5
Operating virtual junction temperature, TJ
–40
125
°C
electrical characteristics over recommended operating junction temperature range, VI(IN) = 5.5 V,
IO = rated current, EN = 0 V (unless otherwise noted)
power switch
PARAMETER
TEST CONDITIONS
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VI(IN) = 5.5 V,
TJ = 25°C
75
95
On state resistance
VI(IN) = 4.5 V,
TJ = 25°C
80
110
m
On-state resistance
VI(IN) = 3 V,
TJ = 25°C
120
175
m
VI(IN) = 2.7 V,
TJ = 25°C
140
215
Output leakage current
EN
VI(IN)
TJ = 25°C
0.001
1
A
Output leakage current
EN = VI(IN)
–40
°C ≤ TJ ≤ 125°C
10
A
t
Output rise time
VI(IN) = 5.5 V,
TJ = 25°C,
CL = 1 F
4
ms
tr
Output rise time
VI(IN) = 2.7 V,
TJ = 25°C,
CL = 1 F
3.8
ms
tf
Output fall time
VI(IN) = 5.5 V,
TJ = 25°C,
CL = 1 F
3.9
ms
tf
Output fall time
VI(IN) = 2.7 V,
TJ = 25°C,
CL = 1 F
3.5
ms
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
enable input (EN)
PARAMETER
TEST CONDITIONS
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
High-level input voltage
2.7 V
≤ VI(IN) ≤ 5.5 V
2
V
Low level input voltage
4.5 V
≤ VI(IN) ≤ 5.5 V
0.8
V
Low-level input voltage
2.7 V
≤ VI(IN) < 4.5 V
0.4
V
Input current
EN = 0 V or EN = VI(IN)
– 0.5
0.5
A
tPLH Propagation (delay) time, low-to-high-level output
CL = 1 F
20
ms
tPHL Propagation (delay) time, high-to-low-level output
CL = 1 F
40
ms
current limit
PARAMETER
TEST CONDITIONS
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
TEST CONDITIONS
MIN
TYP
MAX
TJ =25°C
TPS2010
0.22
0.4
0.6
Short circuit current
TJ = 25 C,
VI(IN) = 5.5 V,
TPS2011
0.66
1.2
1.8
A
Short-circuit current
I(IN)
OUT connected to GND, device
enabled into short circuit
TPS2012
1.1
2
3
A
enabled into short circuit
TPS2013
1.65
2.6
4.5
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TPS2011 | 制造商:TI 制造商全称:Texas Instruments 功能描述:POWER-DISTRIBUTION |
| TPS2011A | 制造商:TI 制造商全称:Texas Instruments 功能描述:POWER-DISTRIBUTION SWITCHES |
| TPS2011AD | 功能描述:电源开关 IC - 配电 1.2A 2.7-5.5V Single Hi-Side MOSFET RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| TPS2011AD | 制造商:Texas Instruments 功能描述:IC HIGH SIDE MOSFET PWR SW 5.5V 8-SOIC |
| TPS2011ADG4 | 功能描述:电源开关 IC - 配电 1.2A 2.7-5.5V Single Hi-Side MOSFET RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
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