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| 型号： | TPS2066ADRBRG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 |
| 封装： | GREEN, PLASTIC, SON-8 |
| 文件页数： | 4/25页 |
| 文件大小： | 1100K |
| 代理商： | TPS2066ADRBRG4 |
APPLICATION INFORMATION
INPUT AND OUTPUT CAPACITANCE
POWER DISSIPATION AND JUNCTION TEMPERATURE
SLVS798F – JANUARY 2008 – REVISED NOVEMBER 2008 ........................................................................................................................................... www.ti.com
Input and output capacitance improve the performance of the device; the actual capacitance should be optimized
for the particular application. For all applications, a 0.01
F to 0.1 F ceramic bypass capacitor between IN and
GND is recommended and should be placed as close to the device as possible for local noise de-coupling. This
precaution reduces ringing on the input due to power-supply transients . Additional input capacitance may be
needed on the input to reduce voltage overshoot from exceeding the absolute maximum voltage of the device
during heavy transients.
Placing a high-value electrolytic capacitor on the output pin is recommended when the output load is heavy.
Additionally, bypassing the output with a 0.01
F to 0.1 F ceramic capacitor improves the immunity of the
device to short-circuit transients.
The low on-resistance of the N-channel MOSFETs allows the small surface-mount packages to pass large
currents. It is good design practice to check power dissipation to ensure that the junction temperature of the
device is within the recommended operating conditions. The below analysis gives an approximation for
calculating junction temperature based on the power dissipation in the package. However, it is important to note
that thermal analysis is strongly dependent on additional system level factors. Such factors include air flow,
board layout, copper thickness and surface area, and proximity to other devices dissipating power. Good thermal
design practice must include all system level factors in addition to individual component analysis.
The following procedure shows how to approximate the junction temperature rise due to power dissipation in a
single channel. The TPS2062A/66A devices contain two channels, so the total device power must sum the power
in each power switch.
Begin by determining the rDS(on) of the N-channel MOSFET relative to the input voltage and operating
temperature. Use the highest operating ambient temperature of interest and read rDS(on) from the typical
characteristics graph as an initial estimate. Power dissipation is calculated by:
PD = rDS(on)× IOUT
2
PT = 2 x PD
Where:
PD = Power dissipation/channel (W)
PT = Total power dissipation for both channels (W)
rDS(on) = Power switch on-resistance ()
IOUT = Maximum current-limit threshold (A)
Finally, calculate the junction temperature:
TJ = PT x RΘJA + TA
Where:
TA= Ambient temperature °C
RΘJA = Thermal resistance (°C/W)
PT = Total power dissipation (W)
Compare the calculated junction temperature with the initial estimate. If they are not within a few degrees, repeat
the calculation using the "refined" rDS(on) from the previous calculation as the new estimate. Two or three
iterations are generally sufficient to achieve the desired result. The final junction temperature is highly dependent
on thermal resistance RθJA, and thermal resistance is highly dependent on the individual package and board
layout. The "Dissipation Rating Table" at the begginng of this document provides example thermal resistances for
specific packages and board layouts.
12
Copyright 2008, Texas Instruments Incorporated
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