参数资料
型号: TPS23757EVM
厂商: Texas Instruments
文件页数: 27/39页
文件大小: 0K
描述: EVALUATION MODULE FOR TPS23757
标准包装: 1
主要目的: 特殊用途 DC/DC,以太网供电(POE)
输出及类型: 1,隔离
功率 - 输出: 11W
输出电压: 5V
电流 - 输出: 2.2A
输入电压: 30 ~ 57V
稳压器拓扑结构: 回扫
频率 - 开关: 220kHz
板类型: 完全填充
已供物品:
已用 IC / 零件: TPS23757
产品目录页面: 1012 (CN2011-ZH PDF)
其它名称: 296-25232
TPS23757
www.ti.com
SLVS948D – JULY 2009 – REVISED NOVEMBER 2013
(a)
R BLNK (k W ) =
BIanking_Interval(%) 4 2 4
′ 10 = ′ 10 = 80
f SW (kHz) 250
(b) Select R BLNK = 80.6 k ? .
Dead Time Resistor, R DT
The required dead time period depends on the specific topology and parasitics. To obtain the optimum timing
resistor, build the supply and tune the dead time to achieve the best efficiency after considering all corners of
operation (load, input voltage, and temperature). A good initial value is 100 ns. Program the dead time with a
resistor connected from DT to ARTN per Equation 3 . Efficiency optimization may be performed by substituting a
potentiometer (POT) for R DT , and adjusting its value to obtain a minimum input current at the desired operating
load.
1. Choose R DT as follows assuming a t DT of 100 ns:
(a)
t DT (ns)   100
R DT (k W ) = = = 50
2 2
(b) Choose R DT = 49.9 k ?
Estimating Bias Supply Requirements and C VC
The bias supply (V C ) power requirements determine the C VC sizing and frequency of hiccup during a fault. The
first step is to determine the power/current requirements of the power supply control, then use this to select C VC .
The control current draw will be assumed constant with voltage to simplify the estimate, resulting in an
approximate value.
First determine the switching MOSFET gate drive power.
1. Let V QG be the gate voltage swing that the MOSFET Q G is rated to (often 10 V).
P GATE C ′ f SW ′ ? Q GATE ′
?
÷ P GAT2 C SW ′ ? Q GATE2 ′
(a)
=V
?
è
V C
V QG
? ?
=V ′ f
? è
V C
V QG
?
÷ ÷
?
(b) Compute gate drive power if V C is 10 V, the switching frequency is 250 kHz, Q GATE is 17 nC, and Q GAT2
is 8 nC.
P GATE = 10 V ′ 250 kHz ′ 17 nC ′
10
10
= 42.5 mW
(c)
P GAT2 = 10 V ′ 250 kHz ′ 8 nC ′
10
10
= 20 mW
P DRIVE = 42.5 mW + 20 mW = 62.5 mW
(d) This illustrates why MOSFET Q G should be an important consideration in selecting the switching
MOSFETs.
2. Estimate the required bias current at some intermediate voltage during the C VC discharge. For the
TPS23757, 7.5 V provides a reasonable estimate. Add the operating bias current to the gate drive current.
P DRIVE V DIS
V C C
(a)
62.5 mW 7.5 V
I DRIVE = x = x = 4.7 mA
V 10 V 10 V
(b) I TOTAL = I DRIVE + I OPERATING = 4.7 mA + 0.92 mA = 5.6 mA
3. Compute the required C VC based on startup within the typical softstart period of 4 ms.
C VC1 VC2 = = = 6.4 m F
V CUVH
(a)
+C
t STARTUP ′ I TOTAL 4 ms ′ 5.6 mA
3.5 V
(b) For this case, a standard 10 μ F electrolytic plus a 0.47 μ F should be sufficient. In practice this is
conservative since it was assumed it would take the full 4 ms to start up.
4. Compute the initial time to start the converter when operating from PoE.
(a) Using a typical bootstrap current of 4 mA, compute the time to startup.
I VC
(b)
C VC ′ V CUV 10.47 m F ′ 9 V
t ST = = = 23.6 ms
4 mA
5. Compute the fault duty cycle and hiccup frequency
Copyright ? 2009–2013, Texas Instruments Incorporated
Submit Documentation Feedback
27
相关PDF资料
PDF描述
TPS62230EVM-370 EVAL MODULE FOR TPS62230-370
TRAVELCUBE SURGE SUP 1OUT W/RJ11 DIRECTPLUG
TRAVELER100BT SURGE SUP 2OUT W/RJ11 DIRECTPLUG
TRAVELER3USB SURGE SUPP USB CHARGE TRAVEL SZ
TRAVELERC6 SURGE SUPPRESSOR 120/240V RJ11
相关代理商/技术参数
参数描述
TPS23757PW 功能描述:热插拔功率分布 Hi Eff PoE Inter & DC/DC Controller RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube
TPS23757PWR 功能描述:热插拔功率分布 Hi Eff PoE Interface & DC/DC Controller RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube
TPS2375D 功能描述:热插拔功率分布 IEEE 802.3af PoE Pwr Device Cntrler RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube
TPS2375D 制造商:Texas Instruments 功能描述:POWER OVER ETHERNET ((NW))
TPS2375DG4 功能描述:热插拔功率分布 IEEE 802.3af PoE Pwr Device Cntrler RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube