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参数资料
| 型号： | TPS2400DBVR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 |
| 封装： | GREEN, PLASTIC, SOT-23, 5 PIN |
| 文件页数： | 12/18页 |
| 文件大小： | 536K |
| 代理商： | TPS2400DBVR |
TPS2400
SLUS599A JUNE 2004 REVISED AUGUST 2008
3
www.ti.com
ELECTRICAL CHARACTERISTICS
TA = 40°C to 85°C, TJ = 40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VI(VIN) = 3.1 V
65
110
II(VIN)
Input supply current, VIN
VI(VIN) = 5.0 V
95
180
A
II(VIN)
Input supply current, VIN
VI(VIN) = 6.5 V
135
220
A
VI(VIN) = 100 V
550
1000
UVLO(upper)
Undervoltage lockout upper threshold
VI(VIN) rising
2.9
3.0
3.1
V
UVLO(hyst)
Undervoltage lockout hysteresis
85
100
115
mV
OVP(upper)
Overvoltage protection upper threshold
VI(VIN) rising
6.7
6.9
7.1
V
OVP(hyst)
Overvoltage protection hysteresis
135
150
165
mV
GATE DRIVE
IOSOURCE(gate) Gate sourcing current
VI(VIN) = 3.1 V, VO(gate) = 7 V
3
10
A
IOSOURCE(gate) Gate sourcing current
VI(VIN) = 5 V, VO(gate) = 10 V
3
10
A
IOSINK(gate)
Gate sinking current(1)
VI(VIN) = 7.2 V, VO(gate) = 15 V
350
485
600
mA
VI(VIN) =3.1V, IOSOURCE(gate) =1.0A
10
12
VOH(gate)
Gate output high voltage
VI(VIN) = 5 V, IOSOURCE(gate) = 1.5A
16
19
VOH(gate)
Gate output high voltage
VI(VIN) =6.5V, IOSOURCE(gate) =1.5A
16
20
V
VOHMAX(gate)
Gate output high maximum voltage
IOSOURCE(gate) = 0 A
20
V
VOL(gate)
Gate output low voltage
VI(VIN) = 7.2 V, IOSINK(gate) = 50 mA
1.0
TON(prop)
Gate turn-on propogation delay, (50%
VI(vin) to VO(gate) = 1 V, RLOAD = 10 M)
VI(VIN) stepped from 0 V to 5 V,
CLOAD = 1 nF
0.1
0.6
TON(prop)
VI(vin) to VO(gate) = 1 V, RLOAD = 10 M)
CLOAD = 10 nF
0.9
3
ms
TON(rise)
Gate turn-on rise time, (VO(gate) = 1 V to
90% VO(gate) , RLOAD = 10 M)
VI(VIN) stepped from 0 V to 5V,
CLOAD = 1 nF
1.5
6
ms
TON(rise)
90% VO(gate) , RLOAD = 10 M)
CLOAD = 10 nF
15
55
TOFF
Turn-off time, (50% VI(VIN) step to
VO(GATE) = 6.9 V, RLOAD = 10 meg )
VI(VIN) stepped from 6 V to 8 V,
CLOAD = 1 nF
0.25
s
TOFF
VO(GATE) = 6.9 V, RLOAD = 10 meg )
CLOAD = 10 nF
0.5
s
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
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