参数资料
型号: TPS40200HD
厂商: TEXAS INSTRUMENTS INC
元件分类: 稳压器
英文描述: SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8
封装: PLASTIC, SOIC-8
文件页数: 15/45页
文件大小: 917K
代理商: TPS40200HD
l
S
pp
L
t
D
V
I
D
=
D
(
)
OUT
DSON
OUT
IN
I
R
DCR
V
+
-
=
D
(
)
mW
10
t
I
V
2
f
t
I
V
2
f
P
CHOFF
pk
IN
S
CHON
pk
IN
S
SW
=
+
÷
è
=
TH
IN
G
GD
CHON
V
R
Q
t
-
=
IN
G
GD
CHOFF
V
R
Q
t
=
mW
22
f
V
Q
P
S
GATE
G
GATE
=
=
mW
2
f
V
C
P
S
2
MAX
_
IN
OSS
COSS
=
=
SGLS400B – OCTOBER 2009 – REVISED MAY 2010
www.ti.com
Where:
RDSON = FET on-state resistance
DCR = Inductor dc resistance
D = Duty cycle
tS = Reciprocal of the switching frequency
Using the values in this example, the dc power loss is 129 mW. The remaining FET losses are:
PSW – Power dissipated while switching the FET on and off
Pgate – Power dissipated driving the FET gate capacitance
PCOSS – Power switching the FET output capacitance
The total power dissipated by the FET is the sum of these contributions:
PFET = PSW + Pgate + PCOSS + PRDSON
The P-channel FET used in this application is an FDC654P, with the following characteristics:
trise = 13 × 10
–9
COSS = 83 × 10
–12
tfall = 6 × 10
–9
Qg = 9 nC
RDSON = 0.1
Vgate = 1.9 V
Qgd = 1.2 × 10
–9
Qgs = 1.0 × 10
–9
Using these device characteristics and the following formulas produces:
(10)
Where:
and
are the switching times for the power FET.
IG = QG × fS = 2.7 mA is the gate current
The sum of the switching losses is 34 mW and is comparable to the 129-mW dc losses. At added expense, a
slightly larger FET would be better because the dc loss would drop and the ac losses would increase, with both
moving toward the optimum point of equal losses.
22
Copyright 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): TPS40200-HT
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