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参数资料
| 型号： | TPS5420MDREPG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 5.2 A SWITCHING REGULATOR, 600 kHz SWITCHING FREQ-MAX, PDSO8 |
| 封装： | GREEN, PLASTIC, MS-012AA, SOIC-8 |
| 文件页数： | 17/23页 |
| 文件大小： | 658K |
| 代理商： | TPS5420MDREPG4 |
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Dissipation Ratings
(1) (2)
Recommended Operating Conditions
Electrical Characteristics
SLVS717 – DECEMBER 2006
THERMAL IMPEDANCE
PACKAGE
JUNCTION-TO-AMBIENT
8-pin D (3)
75
°C/W
(1)
Maximum power dissipation may be limited by overcurrent protection.
(2)
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 125°C. This is the point where
distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or
below 125
°C for best performance and long-term reliability. See Thermal Calculations in applications section of this data sheet for more
information.
(3)
Test board conditions:
a.
3 in
× 3 in, two layers, thickness: 0.062 in
b.
2-oz copper traces located on the top and bottom of the PCB
MIN
MAX
UNIT
VI
Input voltage range, VIN
5.5
35
V
TJ
Operating junction temperature
–55
125
°C
T
J = –55°C to 125°C, VIN = 5.5 V to 35 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply Voltage (VIN Pin)
VSENSE = 2 V, Not switching, PH pin open
3
4.4
mA
IQ
Quiescent current
Shutdown, ENA = 0 V
18
50
A
Undervoltage Lockout (UVLO)
Start threshold voltage, UVLO
5.3
5.5
V
Hysteresis voltage, UVLO
330
mV
Voltage Reference
TJ = 25°C
1.202
1.221
1.239
Voltage reference accuracy
V
IO = 0 A – 2 A
1.196
1.221
1.245
Oscillator
TJ = 25°C
400
500
600
kHz
Internally set free-running frequency
TJ = -55°C to 125°C
375
600
kHz
Minimum controllable on time
150
200
ns
Maximum duty cycle
87%
89%
Enable (ENA Pin)
Start threshold voltage, ENA
1.3
V
Stop threshold voltage, ENA
0.5
V
Hysteresis voltage, ENA
450
mV
Internal slow-start time (0 ~ 100%)
6.6
8
10.6
ms
Current Limit
Current limit
3
4
5.2
A
Current limit hiccup time
13
16
22
ms
Thermal Shutdown
Thermal shutdown trip point
135
162
°C
Thermal shutdown hysteresis
14
°C
Output MOSFET
VIN = 5.5 V
150
rDS(on)
High-side power MOSFET switch
m
VIN = 10 V – 35 V
110
230
3
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