TPS54352,TPS54353
TPS54354,TPS54355
TPS54356,TPS54357
SLVS519A MAY 2004 REVISED OCTOBER 2004
www.ti.com
21
Figure 5. The measured closed loop crossover frequency
of 19.95 kHz differs from the calculated value because the
actual output filter capacitor component parameters
differed slightly from the specified data sheet values.
CAPACITOR ESR AND OUTPUT RIPPLE
The amount of output ripple voltage as specified in the
initial design parameters is determined by the
maximum ESR of the output capacitor and the input
ripple current. The output ripple voltage is the inductor
ripple current times the ESR of the output filter so the
maximum specified ESR as listed in the capacitor data
sheet is given by equation 21:
ESR
(MAX) +
V
IN(MAX)
L
OUT
sw
0.8
V
OUT
V
IN(MAX) *
V
OUT
DV
p
*p(MAX)
and the maximum ESR required is 33 m
. In this design,
the aluminum electrolytic capacitor has an ESR of 0.340
m
, but it is in parallel with an ultra low ESR ceramic
capacitor of 2 m
maximum. The measured output ripple
voltage for this design is approximately 4 mVpp as shown
in Figure 10.
BIAS AND BOOTSTRAP CAPACITORS
Every TPS54356 design requires a bootstrap capacitor,
C3 and a bias capacitor, C4. The bootstrap capacitor must
be 0.1
F. The bootstrap capacitor is located between the
PH pins and BOOT pin. The bias capacitor is connected
between the VBIAS pin and AGND. The value should be
1.0
F. Both capacitors should be high quality ceramic
types with X7R or X5R grade dielectric for temperature
stability. They should be placed as close to the device
connection pins as possible.
LOW-SIDE FET
The TPS54356 is designed to operate using an external
low-side FET, and the LSG pin provides the gate drive
output. Connect the drain to the PH pin, the source to
PGND, and the gate to LSG. The TPS54356 gate drive
circuitry is designed to accommodate most common
n-channel FETs that are suitable for this application. The
SWIFT Designer Software can be used to calculate all the
design parameters for low-side FET selection. There are
some simplified guidelines that can be applied that
produce an acceptable solution in most designs.
The selected FET must meet the absolute maximum
ratings for the application:
D Drain-source voltage (VDSS) must be higher
than the maximum voltage at the PH pin,
which is VINMAX + 0.5 V.
D Gate-source voltage (VGSS) must be greater
than 8 V.
D Drain current (ld) must be greater than 1.1 x
IOUTMAX.
D Drain-source on resistance (RDSON) should be
as small as possible, less than 30 m
W is
desirable. Lower values for RDSON result in
designs with higher efficiencies. It is
important to note that the low-side FET on
time is typically longer than the high-side
FET on time, so attention paid to low-side
FET parameters can make a marked
improvement in overall efficiency.
D Total gate charge (Qg) must be less than 50
nC. Again, lower Qg characteristics result in
higher efficiencies.
D Additionally, check that the device chosen is
capable of dissipating the power losses.
For this design, a Fairchild FDR6674A 30-V n-channel
MOSFET is used as the low-side FET. This particular FET
is specifically designed to be used as a low-side
synchronous rectifier.
POWER GOOD
The TPS54356 is provided with a power good output pin
PWRGD. This output is an open drain output and is
intended to be pulled up to a 3.3-V or 5-V logic supply. A
10-k
, pull-up resistor works well in this application. The
absolute maximum voltage is 6 V, so care must be taken
not to connect this pull-up resistor to VIN if the maximum
input voltage exceeds 6 V.
SNUBBER CIRCUIT
R10 and C11 of the application schematic in Figure 25
comprise a snubber circuit. The snubber is included to
reduce over-shoot and ringing on the phase node when the
internal high-side FET turns on. Since the frequency and
amplitude of the ringing depends to a large degree on
parasitic effects, it is best to choose these component
values based on actual measurements of any design
layout. See literature number SLVP100 for more detailed
information on snubber design.
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