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参数资料
| 型号： | TPS59116RGET |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, PQCC24 |
| 封装： | 4 X 4 MM, GREEN, PLASTIC, VQFN-24 |
| 文件页数： | 2/36页 |
| 文件大小： | 827K |
| 代理商： | TPS59116RGET |
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I
OUT(LL) +
1
2
L
f
(V
IN * VOUT)
V
OUT
V
IN
TI Information — Selective Disclosure
SLUSA57 – NOVEMBER 2010
www.ti.com
VDDQ SMPS, Light Load Condition
TPS59116 automatically reduces switching frequency at light load condition to maintain high efficiency. This
reduction of frequency is achieved smoothly and without increase of VOUTripple or load regulation. Detail
operation is described as follows. As the output current decreases from heavy load condition, the inductor current
is also reduced and eventually comes to the point that its valley touches zero current, which is the boundary
between continuous conduction and discontinuous conduction modes. The rectifying MOSFET is turned off when
this zero inductor current is detected. As the load current further decreased, the converter runs in discontinuous
conduction mode and it takes longer and longer to discharge the output capacitor to the level that requires next
ON cycle. The ON-time is kept the same as that in the heavy load condition. In reverse, when the output current
increase from light load to heavy load, switching frequency increases to the constant 400 kHz as the inductor
current reaches to the continuous conduction. The transition load point to the light load operation IOUT(LL) (i.e. the
threshold between continuous and discontinuous conduction mode) can be calculated in Equation 1:
where
f is the PWM switching frequency (400 kHz)
(1)
Switching frequency versus output current in the light load condition is a function of L, f, VIN and VOUT, but it
decreases almost proportional to the output current from the IOUT(LL) given above. For example, it is 40 kHz at
IOUT(LL)/10 and 4 kHz at IOUT(LL)/100.
Low-Side Driver
The low-side driver is designed to drive high-current, low-RDS(on), N-channel MOSFET(s). The drive capability is
represented by its internal resistance, which are 3
for V5IN to DRVL and 0.9 for DRVL to PGND. A
dead-time to prevent shoot through is internally generated between top MOSFET off to bottom MOSFET on, and
bottom MOSFET off to top MOSFET on. 5-V bias voltage is delivered from V5IN supply. The instantaneous drive
current is supplied by an input capacitor connected between V5IN and GND. The average drive current is equal
to the gate charge at VGS = 5 V times switching frequency. This gate drive current as well as the high-side gate
drive current times 5 V makes the driving power which needs to be dissipated from TPS59116 package.
High-Side Driver
The high-side driver is designed to drive high-current, low-RDS(on) N-channel MOSFET(s). When configured as a
floating driver, 5-V bias voltage is delivered from V5IN supply. The average drive current is also calculated by the
gate charge at VGS = 5V times switching frequency. The instantaneous drive current is supplied by the flying
capacitor between VBST and LL pins. The drive capability is represented by its internal resistance, which are 3
for VBST to DRVH and 0.9
for DRVH to LL.
Current Sensing Scheme
In order to provide both good accuracy and cost effective solution, TPS59116 supports both of external resistor
sensing and MOSFET RDS(on) sensing. For resistor sensing scheme, an appropriate current sensing resistor
should be connected between the source terminal of the bottom MOSFET and PGND. CS pin is connected to the
MOSFET source terminal node. The inductor current is monitored by the voltage between PGND pin and CS pin.
For RDS(on) sensing scheme, CS pin should be connected to V5FILT through the trip voltage setting resistor,
RTRIP. In this scheme, CS terminal sinks 10-mA ITRIP current and the trip level is set to the voltage across the
RTRIP. The inductor current is monitored by the voltage between PGND pin and LL pin so that LL pin should be
connected to the drain terminal of the bottom MOSFET. ITRIP has 4500ppm/°C temperature slope to compensate
the temperature dependency of the RDS(on). In either scheme, PGND is used as the positive current sensing node
so that PGND should be connected to the proper current sensing device, i.e. the sense resistor or the source
terminal of the bottom MOSFET.
10
Copyright 2010, Texas Instruments Incorporated
Product Folder Link(s): TPS59116
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