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参数资料
| 型号： | TPS62306DRC |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING REGULATOR, 3350 kHz SWITCHING FREQ-MAX, PDSO10 |
| 封装： | PLASTIC, QFN-10 |
| 文件页数： | 19/25页 |
| 文件大小： | 831K |
| 代理商： | TPS62306DRC |
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PRODUCT
PREVIEW
ELECTRICAL CHARACTERISTICS
TPS62300, TPS62301, TPS62302
TPS62303, TPS62304, TPS62305
TPS62306, TPS62320, TPS62321
SLVS528 – JULY 2004
V
I = 3.6 V, VO = 1.6 V, EN = VI, MODE/SYNC = GND, L = 1 H, CO = 10 F, TA = -40°C to 85°C, typical values are at
T
A = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VI
Input voltage range
2.7
6.0
V
IO = 0 mA. PFM mode enabled, device not switching
86
105
A
IQ
Operating quiescent current
IO = 0 mA. Switching with no load
3.6
mA
(MODE/SYNC = VIN)
I(SD)
Shutdown current
EN = GND
0.1
1.0
A
V(UVLO)
Undervoltage lockout threshold
2.40
2.55
V
ENABLE, MODE/SYNC
V(EN)
EN high-level input voltage
1.2
V
V(MODE/SYNC)
MODE/SYNC high-level input voltage
1.3
V
V(EN),
EN, MODE/SYNC low-level input
0.4
V
V(MODE/SYNC)
voltage
I(EN),
EN, MODE/SYNC input leakage
EN, MODE/SYNC = GND or VIN
0.01
1.0
A
I(MODE/SYNC)
current
POWER SWITCH
VI = V(GS) = 3.6 V
420
750
m
rDS(on)
P-channel MOSFET on resistance
VI = V(GS) = 2.8 V
520
1000
m
I(LK_PMOS)
P-channel leakage current
V(DS) = 6.0 V
1
A
VI = V(GS) = 3.6 V
330
750
m
rDS(on)
N-channel MOSFET on resistance
VI = V(GS) = 2.8 V
400
1000
m
Discharge resistor for power-down
R(DIS)
30
50
sequence (TPS6232x only)
I(LK_NMOS)
N-channel leakage current
V(DS) = 6.0 V
1
A
P-MOS current limit
2.7 V
≤ V
I ≤ 6.0 V
670
780
890
mA
N-MOS current limit - sourcing
2.7 V
≤ V
I ≤ 6.0 V
550
720
890
mA
N-MOS current limit - sinking
2.7 V
≤ V
I ≤ 6.0 V
–460
–600
–740
mA
Input current limit under short-circuit
VO = 0 V
390
mA
conditions
Thermal shutdown
150
°C
Thermal shutdown hysteresis
20
°C
OSCILLATOR
fSW
Oscillator frequency
2.65
3.0
3.35
MHz
f(SYNC)
Synchronization range
2.65
3.35
MHz
Duty cycle of external clock signal
20%
80%
3
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