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参数资料
| 型号： | TPS65200YFFT |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, BGA36 |
| 封装： | 2.80 X 2.60 MM, 0.40 MM PITCH, GREEN, DSBGA-36 |
| 文件页数： | 59/59页 |
| 文件大小： | 2424K |
| 代理商： | TPS65200YFFT |
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www.ti.com
SLVSA48 – APRIL 2010
ELECTRICAL CHARACTERISTICS (continued)
VBAT = 3.6 V ±5%, TJ = 27C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
During boosting
2.5
Minimum battery voltage for boost
VBATMIN
V
(VSYS pin)
Before boost starts
2.9
3.05
Boost output resistance at high
impedance mode (From VBUS to
HZ_MODE = 1
500
k
Ω
PGND)
CHARGER PROTECTION
Threshold over VBUS to turn off converter
Input VBUSOVP threshold voltage
6.3
6.5
6.7
V
during charge
VOVP-IN_USB
VOVP_IN_USB hysteresis
VBUS falling from above VOVP_IN
140
mV
VCSOUT threshold over VOREG to turn off
Battery OVP threshold voltage
110
117
121
%
charger during charge (% VOREG)
VOVP
Lower limit for VCSOUT falling from > VOVP
VOVP hysteresis
11
%
(% VOREG)
Cycle-by-cycle current limit for
ILIMIT
Charge mode operation
1.8
2.4
3
A
charge
VCSOUT rising, VSHRT connected to VDD
2
2.1
2.2
V
Trickle to fast charge threshold
VBUS –
Resistor connected from VSHRT to GND
1.8
V
0.7
Internal current source connected
VSHORT
9.4
10
10.6
A
to VSHRT pin
VSHORT hysteresis
VCSOUT falling from above VSHORT
100
mV
Enable threshold for internal
percentage of VDD
90
%
VSHORT reference
ISHORT
Trickle charge charging current
VCSOUT ≤ VSHORT
20
30
40
mA
TCF
Thermal regulation threshold
Charge current begins to taper down
120
°C
Time constant for the 32-second
T32S
32 second mode
32
s
timer
WLED VOLTAGE AND CURRENT CONTROL
VREF
Voltage feedback regulation voltage
198
203
208
mV
VFB[4:0] = 01110 (VFB = 25%)
47
50
53
Voltage feedback regulation voltage
VREF_PWM
mV
under brightness control
VFB[4:0] = 01110 (VFB = 10%)
17
20
23
fCTRL
PWM dimming frequency
1
100
kHz
Minimum on-time for PWM dimming
tCNTRL, MIN
2.2
s
pulse
IFB
Voltage feedback input bias current
VFB = 200 mV
1
A
fPWM
PWM frequency, WLED boost
600
kHz
Dmax
Maximum duty cycle
VFB = 100 mV
90
93
%
tmin_on
Minimum 0N pulse width
40
ns
L
Inductor
10
22
H
COUT
Output capacitor
0.47
10
F
WLED POWER SWIITCH
RDS(on)
N-channel MOSFET on-resistance
VSYS = 3.6 V
300
600
m
Ω
ILN_NFET
N-channel leakage current
VSWL = 30 V, TA = 25°C
1
A
Copyright 2010, Texas Instruments Incorporated
9
Product Folder Link(s): TPS65200
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