参数资料
型号: TPS65530ARSLR
厂商: TEXAS INSTRUMENTS INC
元件分类: 稳压器
英文描述: 0.6 A BATTERY CHARGE CONTROLLER, 1650 kHz SWITCHING FREQ-MAX, PQCC48
封装: 6 X 6 MM, 0.40 MM PITCH, GREEN, PLASTIC, VQFN-48
文件页数: 6/32页
文件大小: 923K
代理商: TPS65530ARSLR
CHANNEL DESCRIPTIONS
CH1/3 Description
SLVS835C – APRIL 2008 – REVISED APRIL 2009............................................................................................................................................................ www.ti.com
Table 2. Protection Conditions
PROTECTION
CH1–CH6
CH7
CH8
REF (LDO)
All CH shutdown
All CH shutdown (latch-off)
Change
All CH shutdown (latch-off)
Forced OFF at MOSFET
(latch-off) (without power
(without power OFF
mode
(without power OFF sequence)
OFF sequence)
sequence)
Current over the threshold, VOUT
Detect
less than 80% to compare the
Current over the
VOUT less than 70% to
VOUT less than 80% to
condition
target, and
threshold
compare the target
count 64 cycle × 1.5 MHz
XSLEEP: Change level from Low
OCP
to High
XSLEEP: Change level
XSLEEP: Change level from
Current less than the
ENAFE: Change level from Low
from Low to High
Low to High
threshold (automatic
to High (for CH4)
ENAFE: Change level
ENAFE: Change level from
restoration)
Comeback
EN56: Change level from Low to
from Low to High
Low to High
or
condition
High (for CH5/6)
or
VCC2: Apply more than
or
VCC2: Apply more than
VCC2: Apply more than UVLO
UVLO threshold (1.4 V)
VCC2: Apply more than UVLO
UVLO threshold (1.4 V)
threshold (1.4 V) after
after removing VCC2
threshold (1.4 V) after removing
after removing VCC2
removing VCC2
VCC2
Forced OFF at
Change
Forced OFF at applicable CH
MOSFET, load switch
Forced OFF at MOSFET
mode
MOSFET
turns ON
Detect
Voltage over the threshold at
Voltage over the
OVP
No OVP function
condition
feedback
threshold at feedback
Voltage less than the
Comeback
Voltage less than the threshold at EN7: Change level from
threshold at feedback
condition
feedback (auto-recovery)
Low to High
(auto-recovery)
Change
All CH shutdown (without power OFF sequence)
mode
Detect
TSD
The junction temperature is more than the threshold.
condition
Comeback
XSLEEP: Change level from Low to High, ENAFE: Change level from Low to High (for CH4), EN56: Change level from
condition
Low to High (for CH5/6), or VCC2: More than 1.4 V
Both CH1 and CH3 are the same topology. CH1/3 are the voltage-mode-controlled synchronous buck converters
for engine core (CH1) or external memory (CH3). Both high-side and low-side switches are integrated into the
device and consist of NMOS-FET only. The gate of the high-side switch is driven by bootstrap circuit. The
capacitance of the bootstrap is included in the device. These channels are able to operate up to 100% duty
cycle.
This device has a discharge path to use the switch (Q_Discharge1/3) for the CH1/3 output capacitor via the
inductor. The switch is activated after the power OFF sequence has started. Typical resistance at the discharge
circuit is 1 k
. When the device detects the threshold at FB1/3 after the power OFF sequence has started, the
MOSFET turns OFF and the output is fixed with high impedance.
It is acceptable to connect the battery to VCC1/VCC3 (pins 18/23) directly when the battery voltage is more than
2.5 V. When the battery voltage is less than 2.5 V, the CH8 output should be connected to VCC1/VCC3.
The output voltage is programmed from 0.9 V to 2.5 V (both CH1 and CH3) to use the feedback loop sensed by
the external resistances. The output voltage is calculated by Equation 3. The block diagram is shown in Figure 4.
VOUT = (1 + R2/R1) × 0.6 [V]
(3)
Where:
VOUT = Output voltage [V]
R1, R2 = Feedback resistance (see Figure 4)
14
Copyright 2008–2009, Texas Instruments Incorporated
Product Folder Link(s): TPS65530A
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