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| 型号： | TPS65560RGTTG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 1.78 A BATTERY CHARGE CONTROLLER, PQCC16 |
| 封装： | GREEN, PLASTIC, QFN-16 |
| 文件页数： | 9/16页 |
| 文件大小： | 1108K |
| 代理商： | TPS65560RGTTG4 |
www.ti.com
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DISSIPATION RATINGS
SLVS608 – JANUARY 2006
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
TA
PACKAGE MARKING
PACKAGE(1)
PART NUMBER
-35
°C to 85°C
BPR
16-pin QFN
TPS65560RGT
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
over operating free-air temperature range (unless otherwise noted) (1)
UNIT
VCC
-0.6 V to 6 V
VSS
Supply voltage
VBAT
-0.6 V to 13 V
V(SW)
Switch terminal voltage
-0.6 V to 50 V
I(SW)
Switch current between SW and PGND, ISW
3 A
VI
Input voltage of CHG, I_PEAK, F_ON
-0.3 V to VCC
Tstg
Storage temperature
-40
°C to 150°C
TJ
Maximum junction temperature
125
°C
ESD rating
HBM (Human Body Model) JEDEC JES22-A114
1 kV
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
MIN
NOM
MAX
UNIT
Supply voltage, VCC
2.7
4
V
VSS
Supply voltage, VBAT
1.6
12
V
V(SW)
Switch terminal voltage,
-0.3
45
V
I(SW)
Switch current between SW and PGND
2
A
Operating free-air temperature range
-35
85
°C
VIH
High-level digital input voltage at CHG and F_ON
2
V
VIL
Low-level digital input voltage at CHG and F_ON
0.5
V
POWER RATING
PACKAGE
RθJA
(1)
TA < 25°C
TA = 70°C
TA = 85°C
QFN
47.4
°C/W
2.11 W
1.16 W
844 mW
(1)
The thermal resistance, RθJA, is based on a soldered PowerPAD on a 2S2P JEDEC board using thermal vias.
2
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相关代理商/技术参数 |
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|---|---|
| TPS65561RGTR | 功能描述:其他电源管理 Integr w/IGBT Driver RoHS:否 制造商:Texas Instruments 输出电压范围: 输出电流:4 mA 输入电压范围:3 V to 3.6 V 输入电流: 功率耗散: 工作温度范围:- 40 C to + 110 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-48 封装:Reel |
| TPS65561RGTRG4 | 功能描述:其他电源管理 Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Texas Instruments 输出电压范围: 输出电流:4 mA 输入电压范围:3 V to 3.6 V 输入电流: 功率耗散: 工作温度范围:- 40 C to + 110 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-48 封装:Reel |
| TPS65561RGTT | 功能描述:其他电源管理 Integr w/IGBT Driver RoHS:否 制造商:Texas Instruments 输出电压范围: 输出电流:4 mA 输入电压范围:3 V to 3.6 V 输入电流: 功率耗散: 工作温度范围:- 40 C to + 110 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-48 封装:Reel |
| TPS65561RGTTG4 | 功能描述:其他电源管理 Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Texas Instruments 输出电压范围: 输出电流:4 mA 输入电压范围:3 V to 3.6 V 输入电流: 功率耗散: 工作温度范围:- 40 C to + 110 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-48 封装:Reel |
| TPS65562RGTR | 功能描述:功率驱动器IC Integr Photo Flash Charger & IGBT Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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