参数资料
型号: TPSMP16HE3/85A
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: TVS 400W 16V 10% UNDIR DO220AA
标准包装: 10,000
系列: eSMP™
电压 - 反向隔离(标准值): 12.9V
电压 - 击穿: 14.4V
功率(瓦特): 400W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: DO-220AA
供应商设备封装: DO-220AA(SMP)
包装: 带卷 (TR)
TPSMP6.8 thru TPSMP43A
www.vishay.com
Vishay General Semiconductor
High Power Density Surface Mount PAR ?
Transient Voltage Suppressors
FEATURES
e S MP S eries
?
? Junction passivation
optimized design
passivated anisotropic rectifier technology
? T J = 185 °C capability suitable for high reliability
and automotive requirement
? Very low profile - typical height of 1.0 mm
? Ideal for automated placement
? Uni-direction only
DO-220AA ( S MP)
PRIMARY CHARACTERISTICS
? Excellent clamping capability
? Low incremental surge resistance
? Very fast response time
? Meets MSL level 1, per J-STD-020, LF maximum peak of
V BR
P PPM (for V BR 6.8 V)
P PPM (for V BR 7.5 V to 12 V)
P PPM (for V BR 13 V to 43 V)
V WM
P D
I FSM
T J max.
Polarity
Package
6.8 V to 43 V
250 W
300 W
400 W
5.5 V to 36.8 V
2.5 W
40 A
185 °C
Uni-directional
DO-220AA (SMP)
260 °C
? AEC-Q101 qualified
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
TYPICAL APPLICATIONS
Terminals:
Matte tin plated leads, solderable
per
Protection for ICs, drive transistors, signal lines of sensor
units, and electronic units in consumer, computer, industrial
and automotive applications.
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform (fig. 1 and 3) (1)(2)
SYMBOL
P PPM
VALUE
See table next page
UNIT
W
Peak power pulse current with a 10/1000 μs waveform (fig. 1)
Power dissipation on infinite heatsink, T A = 75 °C
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A (3)
Operating junction and storage temperature range
(1)
I PPM
P D
I FSM
V F
T J , T STG
See table next page
2.5
40
2.5
- 65 to + 185
A
W
A
V
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T
A = 25 °C per fig. 2
(2) Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 08-Oct-12
1
Document Number: 88471
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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