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参数资料
| 型号： | TRCV0110G |
| 英文描述： | ATM/SONET DEMULTIPLEXER|BIPOLAR|BGA|177PIN|PLASTIC |
| 中文描述： | 的ATM / SONET的分路器|双极|的BGA | 177PIN |塑料 |
| 文件页数： | 17/26页 |
| 文件大小： | 476K |
| 代理商： | TRCV0110G |
Agere Systems Inc.
17
Data Sheet
March 28, 2002
Clock Recovery, 1:16 Data Demultiplexer
TRCV0110G 10 Gbits/s Limiting Amplifier
Electrical Characteristics
LVDS, CMOS, and CML Input and Output Pins
Table 9. LVDS dc Output Pin Characteristics
Table 10. LVDS Input Pin Characteristics
Applicable
Pins
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
D[15:0]P/N,
CKOP/N
CK622P/N
V
OH
V
OL
|V
OD
|
Output Voltage High
Output Voltage Low
Output Differential Volt-
age
Output Offset Voltage
Differential Output
Impedance
R
O
Mismatch Between
A & B
Change in V
OD
Between
Logic 0 and Logic 1
Change in V
OS
Between
Logic 0 and Logic 1
Output Current
R
LOAD
= 100
± 1%
R
LOAD
= 100
± 1%
R
LOAD
= 100
± 1%
—
925
250
—
—
—
1475
—
400
mV
mV
mV
V
OS
R
O
R
LOAD
= 100
± 1%
V
CM
= 1.0 V and 1.4 V
1125
80
—
100
1275
120
mV
R
O
V
CM
= 1.0 V and 1.4 V
—
—
20
%
|
V
OD
|
R
LOAD
= 100
± 1%
—
—
25
mV
|
Vos|
R
LOAD
= 100
± 1%
—
—
25
mV
I
SA
, I
SB
Driver shorted
to GND
Drivers shorted
together
—
—
—
24
mA
I
SAB
Output Current
—
—
12
mA
|I
XA
|,|I
XB
| Power-off Leakage
—
—
—
*
* This leakage parameter is not specified due to EDS clamp diode conducting current during forward bias test.
This voltage is measured on each P/N output.
mA
Applicable
Pins
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
REFCLKP/N
V
CM
Input Common Mode Voltage
Range
Input Peak Differential voltage
Threshold Hysteresis
*
Differential Input Impedance
Avg(V
IA
,V
IB
)
0
1200
2400
mV
V
DIFF
V
HYST
R
IN
|V
IA
– V
IB
|
(+V
ID
) – (–V
ID
)
f = 622.08 MHz
100
25
80
—
—
100
800
—
120
mV
mV
* Buffer will not produce output transitions when input is open-circuited.
Looser than ICORE/
IEEE
spec of ±10
.
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