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| 型号： | TRF3702IRHC |
| 厂商： | Texas Instruments |
| 文件页数： | 5/39页 |
| 文件大小： | 0K |
| 描述： | IC QUADRATURE MODULATOR 16-VQFN |
| 产品培训模块： | RFID Technology and Applications |
| 标准包装： | 92 |
| 功能： | 调制器 |
| LO 频率： | 1.5GHz ~ 2.5GHz |
| RF 频率： | 1.5GHz ~ 2.5GHz |
| P1dB： | 7dBm |
| 底噪： | -155dBm/Hz |
| 输出功率： | -2.5dBm |
| 电流 - 电源： | 170mA |
| 电源电压： | 4.5 V ~ 5.5 V |
| 测试频率： | 1.842GHz |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 包装： | 管件 |
| 产品目录页面： | 592 (CN2011-ZH PDF) |
| 配用： | TRF3702EVM-ND - TRF3702EVM |
| 其它名称： | 296-17350 |
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TRF3702
www.ti.com
SLWS149A – SEPTEMBER 2004 – REVISED AUGUST 2006
RF OUTPUT PERFORMANCE
Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, f LO = 1842 MHz at 0 dBm (unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Single and Two-Tone Specifications
Output power
–5
–2.5
dBm
Second baseband harmonic
(USB or LSB) (2)
Third baseband harmonic
(USB or LSB) (2)
IMD 3
P1dB (output compression
point)
I, Q (1) = 1 Vp-p, f BB = 928 kHz
I, Q (1) = 1 Vp-p (two-tone signal, f BB1 = 928 kHz,
f BB2 = 992 kHz)
–50
–57
–59
7
–42
–50
–53
dBc
dBc
dBc
dBm
NSD
Noise spectral density
I, Q = VCM = 3.7 VDC (all inputs tied to VCM), 6-MHz offset
from carrier
–155
dBm/Hz
RFOUT pin impedance (4)
6-MHz offset from carrier, P out = 0 dBm, over temperature
I, Q (1) = 1 Vp-p, f BB = 928 kHz, unadjusted
–148.5
28 + j8
30
–146.5 (3)
?
Carrier suppression
I, Q (1) = 1 Vp-p, f BB = 928 kHz, optimized
55
dBc
I,
Q (1)
= 1 Vp-p, f BB = 928 kHz, over
temperature (5)
44
I, Q (1) = 1 Vp-p, f BB = 928 kHz, unadjusted
35
Sideband suppression
I, Q (1) = 1 Vp-p, f BB = 928 kHz, optimized
55
dBc
I,
Q (1)
= 1 Vp-p, f BB = 928 kHz, over
temperature (5)
47
(1)
(2)
(3)
(4)
(5)
I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p.
USB = upper sideband. LSB = lower sideband.
Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire
temperature range, T A = –40 ° C to 85 ° C.
For a listing of impedances at various frequencies, see Table 1 .
After optimization at room temperature. See the Definitions of Selected Specifications section.
RF OUTPUT PERFORMANCE
Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, f LO = 1960 MHz at 0 dBm (unless otherwise specified)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Single and Two-Tone Specifications
Output power
–3
dBm
Second baseband harmonic
(USB or LSB) (2)
Third baseband harmonic
(USB or LSB) (2)
I, Q (1) = 1 Vp-p, f BB = 928 kHz
–50
–60
dBc
dBc
IMD 3
P1dB (output compression
point)
I, Q (1) = 1 Vp-p (two-tone signal, f BB1 = 928 kHz,
f BB2 = 992 kHz)
–59
7
–53
dBc
dBm
NSD
Noise spectral density
6-MHz offset from carrier, P out = 0 dBm, over temperature
–148
–146.5 (3)
dBm/Hz
RFOUT pin impedance (4)
28 + j15
?
Carrier suppression
Sideband suppression
I, Q (1) = 1 Vp-p, f BB = 928 kHz, unadjusted
I, Q (1) = 1 Vp-p, f BB = 928 kHz, optimized
I, Q (1) = 1 Vp-p, f BB = 928 kHz, unadjusted
I, Q (1) = 1 Vp-p, f BB = 928 kHz, optimized
33
55
35
55
dBc
dBc
(1)
(2)
(3)
(4)
I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p.
USB = upper sideband. LSB = lower sideband.
Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire
temperature range, T A = –40 ° C to 85 ° C.
For a listing of impedances at various frequencies, see Table 1 .
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