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参数资料
| 型号： | TS12 |
| 厂商： | 意法半导体 |
| 英文描述： | SENSITIVE & STANDARD(12A SCRs) |
| 中文描述： | 敏感 |
| 文件页数： | 2/11页 |
| 文件大小： | 122K |
| 代理商： | TS12 |
TN12, TS12 and TYNx12 Series
2/11
Table 3: Absolute Ratings
(limiting values)
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
■
SENSITIVE
Symbol
Parameter
Value
Unit
TN12-G
TYN12
TN12-B/H
TS12-B/H
I
T(RMS)
RMS on-state current (180° conduction angle)
T
c
= 105°C
12
A
IT
(AV)
Average on-state current (180° conduction
angle)
T
c
= 105°C
8
A
I
TSM
Non repetitive surge peak on-
state current
t
p
= 8.3 ms
T
j
= 25°C
145
115
A
t
p
= 10 ms
140
110
I
2
t
I
2
t Value for fusing
t
p
= 10 ms
T
j
= 25°C
98
60
A
2
S
dI/dt
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, t
r
≤
100 nsF = 60 Hz
T
j
= 125°C
50
A/μs
I
GM
Peak gate current
t
p
= 20 μs
T
j
= 125°C
4
A
P
G(AV)
Average gate power dissipation
T
j
= 125°C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage (for
TN12
&
TYN12
only)
5
V
Symbol
Test Conditions
TS1220
Unit
I
GT
V
D
= 12 V R
L
= 140
MAX.
200
μA
V
GT
MAX.
0.8
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
R
GK
= 1 k
T
j
= 125°C
MIN.
0.1
V
V
RG
I
RG
= 10 μA
I
T
= 50 mA R
GK
= 1 k
MIN.
8
V
I
H
MAX.
5
mA
I
L
I
G
= 1 mA R
GK
= 1 k
MAX.
6
mA
dV/dt
V
D
= 65 % V
DRM
R
GK
= 220
T
j
= 125°C
MIN.
5
V/μs
V
TM
I
TM
= 24 A tp = 380 μs
T
j
= 25°C
MAX.
1.6
V
V
t0
Threshold voltage
T
j
= 125°C
MAX.
0.85
V
R
d
Dynamic resistance
T
j
= 125°C
MAX.
30
m
I
DRM
I
RRM
V
DRM
= V
RRM
R
GK
= 220
T
j
= 25°C
MAX.
5
μA
T
j
= 125°C
2
mA
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