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参数资料
| 型号： | TS12N30CS |
| 厂商： | Taiwan Semiconductor Co., Ltd. |
| 元件分类： | DC/DC变换器 |
| 英文描述： | DC-DC Converter Control and Synchronous AceFET |
| 中文描述： | DC - DC转换控制和同步AceFET |
| 文件页数： | 2/4页 |
| 文件大小： | 270K |
| 代理商： | TS12N30CS |
Electrical Characteristics
T
A
=25°C unless otherwise specified
Symbol Parameter Test Condition Min Typ. Max Units
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 uA 30
V
I
GSS
Gate-Body Leakage V
GS
= +12, V
DS
=0V +150 nA
I
DSS
Zero Gate Voltage Drain Current Tj = 150°C, V
DS
=30V , V
GS
=0 V 250 uA
I
DDS
Drain to Drain Sense Leakage Tj = 150°C, V
DS
=30V , V
GS
=0 V 250 uA
R
DS
(on)
Static Drain-Source On-Resistance V
GS
= 4.5 V, I
D
= 12A 6
m
R
DSDS
(on)
Drain Sense On-Resistance V
GS
= 4.5 V, I
D
= 0.35A 210
m
V
GS
(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA 1.3 V
Qg
Total Gate Charge V
DS
= 30V , V
GS
= 4.5V, I
D
=12A 15
nC
Rg Gate Resistance
V
DS
= 0V , f = 1MHz
0.4
Ohms
Coss
Output Capacitance V
DS
= 30V , V
GS
= 0V, f = 1MHz 650 pF
Ciss
Input Capacitance V
DS
= 30V , V
GS
= 0V, f = 1MHz 1500 pF
Crss
Reverse transfer capacitance V
DS
= 30V , V
GS
= 0V, f = 1MHz 220 pF
trr
Reverse Recovery time If = 12A , di/dt = 100A / us 40 ns
Source-Drain Diode Tj = 150°C
V
SD
Forward On-Voltage I
S
= 12A, V
GS
= 0V 0.75
Source-Drain Diode
V
ID(on)
On-State Drain Current V
GS
= 4.5V , V
DS
= 1V
25
A
T
PRELIMINARY DATA SHEET
2
6/19/03 Rev0
Eas Avalanche Energy UIS
Single Pulse 10us , V
DS
> BV
DSS
2.5
mJ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TS12S-M | 制造商:SUNTAN 制造商全称:SUNTAN 功能描述:ELECTRIC DOUBLE LAYER CAPACITOR - GOLD CAPACITOR |
| TS12S-R | 制造商:SUNTAN 制造商全称:SUNTAN 功能描述:ELECTRIC DOUBLE LAYER CAPACITOR - GOLD CAPACITOR |
| TS12S-S | 制造商:SUNTAN 制造商全称:SUNTAN 功能描述:ELECTRIC DOUBLE LAYER CAPACITOR - GOLD CAPACITOR |
| TS12S-V | 制造商:SUNTAN 制造商全称:SUNTAN 功能描述:ELECTRIC DOUBLE LAYER CAPACITOR - GOLD CAPACITOR |
| TS-12-W | 制造商:HellermannTyton 功能描述: |
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