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参数资料
| 型号： | TS13002ACTA3 |
| 厂商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | High Voltage NPN Transistor |
| 中文描述： | 高压NPN晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 144K |
| 代理商： | TS13002ACTA3 |
TS13002A
1-2
2004/08 rev. C
TS13002A
High Voltage NPN Transistor
Pin assignment:
1. Emitter
2. Collector
3. Base
BV
CEO
= 400V
BV
CBO
= 700V
Ic = 0.3A
V
CE (SAT)
, = 1.5V @ Ic / Ib = 200mA / 20mA
Features
High voltage
.
High speed switching
Structure
Silicon triple diffused type.
NPN silicon transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Ordering Information
Part No.
Packing
Package
TS13002ACT B0
Bulk
TO-92
TS13002ACT A3
AMMO pack
TO-92
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
700V
V
Collector-Emitter Voltage
V
CEO
V
EBO
400V
V
Emitter-Base Voltage
9
V
DC
0.3
Collector Current
Pulse
I
C
0.5
A
Collector Power Dissipation
P
D
T
J
0.6
W
o
C
Operating Junction Temperature
+150
Operating Junction and Storage Temperature Range
Electrical Characteristics
T
STG
- 55 to +150
o
C
Ta = 25
o
C unless otherwise noted
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Voltage
I
C
= 10mA, I
B
= 0
I
C
= 1mA, I
E
= 0
BV
CBO
BV
CEO
700
--
--
V
Collector-Emitter Breakdown Voltage
400
--
--
V
Emitter-Base Breakdown Voltage
I
E
= 1mA, I
C
= 0
V
CB
= 700V, I
E
= 0
V
EB
= 7V, I
C
= 0
BV
EBO
I
CBO
I
EBO
9
--
--
V
Collector Cutoff Current
--
--
10
uA
Emitter Cutoff Current
--
--
10
uA
Collector-Emitter Saturation Voltage
I
C
/ I
B
= 200mA / 20mA
I
C
/ I
B
= 100mA / 10mA
V
CE(SAT)1
V
CE(SAT)2
--
--
--
--
1.5
1.0
V
V
CE
= 10V, I
C
= 10uA
V
CE
= 10V, I
C
= 100mA
h
FE
1
h
FE
2
15
--
40
25
--
40
DC Current Gain
V
CE
= 10V, I
C
= 280mA
V
CE
= 10V, I
C
= 0.1A
h
FE
3
f
T
12
--
30
Frequency
4
--
--
MHz
Output Capacitance
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 100mA,
I
B1
= I
B2
= 20mA,
R
L
= 125ohm
Cob
--
21
--
pF
Turn On Time
t
ON
t
STG
--
1.1
--
μ
S
Storage Time
--
--
4
μ
S
Fall Time
Note : pulse test: pulse width <=5mS, duty cycle <=10%
t
f
--
--
0.7
μ
S
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| TS13002ACTB0 | High Voltage NPN Transistor |
| TS13002A | High Voltage NPN Transistor |
| TS13002CTA3 | High Voltage NPN Transistor |
| TS13002CTB0 | High Voltage NPN Transistor |
| TS13002 | High Voltage NPN Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TS13002ACTA3G | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor |
| TS13002ACTB0 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor |
| TS13002ACTB0G | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:High Voltage NPN Transistor |
| TS13002CT | 功能描述:两极晶体管 - BJT NPN 700V 0.2A High Voltage/Speed RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| TS13002CT A3 | 制造商:SKMI/Taiwan 功能描述:Trans GP BJT NPN 400V 0.2A 3-Pin TO-92 Ammo |
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