参数资料
型号: TS2026LCS
厂商: Taiwan Semiconductor Co., Ltd.
元件分类: 基准电压源/电流源
英文描述: Dual-Channel Power Distribution Switch
中文描述: 双通道配电开关
文件页数: 5/7页
文件大小: 275K
代理商: TS2026LCS
TS2026L
5-7
2005/11 rev. A
Function Description
Input and Output
IN is the power supply connection to the logic circuitry and the drain of the output MOSFET. OUT is the source of
the output MOSFET. In a typical circuit, current flows from IN to OUT toward the load. If V
OUT
is greater than V
IN
,
current will flow from OUT to IN, since the switch is bidirectional when enabled. The output MOSFET and driver
circuitry are also designed to allow the MOSFET source to be externally forced to a higher voltage than the drain
(V
OUT
> V
IN
) when the switch is disabled. In this situation, the TS2026 prevents undesirable current flow from OUT
to IN.
Thermal Shutdown
Thermal shutdown is employed to protect the device from damage should the die temperature exceed safe margins
due mainly to short circuit faults. Each channel employs its own thermal sensor. Thermal shutdown shuts off the
output MOSFET and asserts the FLG output if the die temperature reaches 140
o
C and the overheated channel is in
current limit. The over channel will be shut off. Upon determining a thermal shutdown condition. The TS2026 will
automatically reset its output when the die temperature cools down to 120
o
C . The TS2026 output and FLG signal
will continue to cycle on and off until the device is disabled or the fault is removed. Figure 1. Depicts typical timing.
Depending on PCB layout, package, ambient temperature, etc., it may take several hundred milliseconds from the
incidence of the fault to the output MOSFET being shut off. This time will be shortest in the case of dead short on
the output.
Power Dissipation
The device’s junction temperature depends on several factors such as the load, PCB layout, ambient temperature
and package type. Equations that can be used to calculate power dissipation of each channel and junction
temperature are found below.
P
D
= R
DS(ON)
x I
OUT
Total power dissipation of the device will be the summation of PD for both channels. To relate this to junction
temperature, the following equation can be used:
T
J
= P
D
x
θ
JA
+ T
A
Where:
T
J
= junction temperature
T
A
= ambient temperature
θ
JA
= is the thermal resistance of the package
2
Current Sensing and Limiting
The current-limit threshold is preset internally. The preset level prevents damage to the device and external load but
still allows a minimum current of 500mA to be delivered to the load. The current-limit circuit senses a portion of the
output MOSFET switch current. The current-sense resistor shown in the block diagram is virtual and has no voltage
drop. The reaction to an over current condition varies with three scenarios.
Switch Enable into Short-Circuit
If a switch is enabled into a heavy load or short-circuit, the switch immediately enters into a constant-current mode,
reducing the output voltage. The FLG signal is asserted indicating an over current condition.
Switch Enable Applied to Enabled Output
When a heavy load or short-circuit is applied to an enabled switch, a large transient current may flow until the
current limit circuitry responds. Once this occurs the device limits current to less than the short circuit current limit
specification.
Current-Limit Response-Ramped Load
The TS2026 current-limit profile exhibits a small fold back effect of about 200mA. Once this current-limit threshold is
exceeded the device switches into a constant current mode. It is important to note that the device will supply current
up to the current-limit threshold
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