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参数资料
| 型号： | TS272IBD |
| 厂商： | 意法半导体 |
| 英文描述： | HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |
| 中文描述： | 高速CMOS双运算放大器 |
| 文件页数： | 4/9页 |
| 文件大小： | 216K |
| 代理商： | TS272IBD |
TS272C,I,M
4/9
ELECTRICAL CHARACTERISTICS
V
CC
+
= +10V, V
CC
-
= 0V, T
amb
= +25°C (unless otherwise specified)
Symbol
Parameter
TS272C/AC/BC
TS272I/AI/BI
TS272M/AM/BM
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
V
io
Input Offset Voltage
V
O
= 1.4V, V
ic
= 0V
TS272C/I/M
TS272AC/AI/AM
TS272B/C/I/M
TS272C/I/M
TS272AC/AI/AM
TS272B/C/I/M
T
min
≤
T
amb
≤
T
max
1.1
0.9
0.25
10
5
2
12
6.5
3
1.1
0.9
0.25
10
5
2
12
6.5
3
mV
DV
io
Input Offset Voltage Drift
2
2
μV/°C
I
io
Input Offset Current note
1)
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
Input Bias Current - see note 1
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
High Level Output Voltage
V
id
= 100mV, R
L
= 10k
T
min
≤
T
amb
≤
T
max
Low Level Output Voltage
V
id
= -100mV
Large Signal Voltage Gain
V
iC
= 5V, R
L
= 10k
,
V
o
= 1V to 6V
T
min
≤
T
amb
≤
T
max
Gain Bandwidth Product
A
v
= 40dB, R
L
= 10k
,
C
L
= 100pF, f
in
= 100kHz
Common Mode Rejection Ratio
V
iC
= 1V to 7.4V, V
o
= 1.4V
Supply Voltage Rejection Ratio
V
CC+
= 5V to 10V, V
o
= 1.4V
Supply Current (per amplifier)
A
v
= 1, no load, V
o
= 5V
T
min
≤
T
amb
≤
T
max
Output Short Circuit Current
V
o
= 0V, V
id
= 100mV
Output Sink Current
V
o
= V
CC
, V
id
= -100mV
Slew Rate at Unity Gain
R
L
= 10k
, C
L
= 100pF, V
i
= 3 to 7V
Phase Margin at Unity Gain
A
v
= 40dB, R
L
= 10k
, C
L
= 100pF
Overshoot Factor
1.
Maximum values including unavoidable inaccuracies of the industrial test.
1
100
1
200
pA
I
ib
1
150
1
300
pA
V
OH
8.2
8.1
8.4
8.2
8
8.4
V
V
OL
50
50
mV
A
vd
10
7
15
10
6
15
V/mV
GBP
3.5
3.5
MHz
CMR
65
80
65
80
dB
SVR
60
70
60
70
dB
I
CC
1000
1500
1600
1000
1500
1700
μA
I
o
60
60
mA
I
sink
45
45
mA
SR
5.5
5.5
V/
μ
s
φ
m
40
40
Degrees
K
OV
30
30
%
e
n
Equivalent Input Noise Voltage
f = 1kHz, R
s
= 100
30
30
V
o1
/V
o2
Channel Separation
120
120
dB
Hz
--nV
相关PDF资料 |
PDF描述 |
|---|---|
| TS272IBN | HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |
| TS272IBP | HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |
| TS272ID | HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |
| TS272IN | HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |
| TS272IP | HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TS272IBI | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH PERFORMANCE CMOS DUAL OPERATIONAL AMPLIFIERS |
| TS272IBN | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |
| TS272IBP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |
| TS272ID | 功能描述:运算放大器 - 运放 Dual Hi-Performance RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| TS272ID | 制造商:STMicroelectronics 功能描述:OP AMP DUAL CMOS SMD SOIC8 272 |
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