参数资料
型号: TS34119
厂商: Taiwan Semiconductor Co., Ltd.
元件分类: 运动控制电子
英文描述: Low Power Audio Amplifier
中文描述: 低功率音频放大器
文件页数: 6/11页
文件大小: 492K
代理商: TS34119
TS34119
6-11
2004/09 rev. A
Design Guideline
POWER DISSIPATION
Figure 8 to 10 indicate the device dissipation (within the IC) for various combinations of V
CC
, R
L
, and load power.
The maximum power which can safely be dissipated within the TS34119 is found from the following equation:
P
D
= (140
o
C - Ta) /
ja
Where Ta is the ambient temperature; and
ja is the package thermal resistance (100
o
C / W for the standard DIP
package, and 180
o
C / W for the surface mount package.) The power dissipated within the TS34119, in a given
application, it is found from the following equation: P
D
= (V
CC
×
I
CC
) + (I
RMS
×
V
CC
) - (RL
×
I
RMS
Where I
CC
is obtained from Figure 15; and I
RMS
is the RMS current at the load; and RL is load resistance. Figure 8 to
10, along with Figure 11 to 13 (distortion curves), and a peak working load current of ±200mA, define the operating
range for the TS34119. The operating range is further defined in terms of allowable load power in Figure 14 for loads
of 8
, 16
and 32
. The left (ascending) portion of each of the three curves is defined by the power level at which
10% distortion occurs. The center flat portion of each curve is defined by the maximum output current capability of
the TS34119. The right (descending) portion of each curve is defined by the maximum internal power dissipation of
the IC at 25
o
C. At higher ambient temperatures, the maximum load power must be reduced according to the above
equations. Operating the device beyond the current and junction temperature limits will degrade long-term reliability.
2
)
Circuit Description
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