参数资料
型号: TS3A24157RSERG4
厂商: Texas Instruments
文件页数: 4/26页
文件大小: 0K
描述: IC SWITCH DUAL SPDT 10UQFN
标准包装: 3,000
功能: 开关
电路: 2 x SPDT
导通状态电阻: 600 毫欧
电压电源: 单电源
电压 - 电源,单路/双路(±): 1.65 V ~ 3.6 V
电流 - 电源: 15nA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-UFQFN
供应商设备封装: 10-UQFN(2.0x1.5)
包装: 带卷 (TR)
www.ti.com
0.65-
DUAL SPDT ANALOG SWITCH
DUAL-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER
SCDS208A – JUNE 2007 – REVISED SEPTEMBER 2007
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
Δron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
INC(OFF)
worst-case input and output conditions
INC(PWROFF)
Leakage current measured at the NC port during the power-down condition, V+ = 0
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
INO(OFF)
worst-case input and output conditions
INO(PWROFF)
Leakage current measured at the NO port during the power-down condition, V+ = 0
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
INC(ON)
(COM) open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
INO(ON)
(COM) open
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
ICOM(ON)
and the output (NC or NO) open
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
tON
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
tOFF
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
tBBM
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or
QC
COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input. Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
CI
Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
OISO
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
XTALK
NC). This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
THD
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
12
Copyright 2007, Texas Instruments Incorporated
Product Folder Link(s): TS3A24157
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