参数资料
型号: TS5A3359YEPR
厂商: TEXAS INSTRUMENTS INC
元件分类: 多路复用及模拟开关
英文描述: 3-CHANNEL, SGL ENDED MULTIPLEXER, BGA8
封装: WCSP-8
文件页数: 1/24页
文件大小: 328K
代理商: TS5A3359YEPR
TS5A3359
1 W SP3T ANALOG SWITCH
5V/3.3V SINGLECHANNEL 3:1 MULTIPLEXER/DEMULTIPLEXER
SCDS214 – OCTOBER 2005
Description
The TS5A3359 is a single-pole triple-throw (SP3T)
analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers a low ON-state resistance
and excellent ON-state resistance matching with the
break-before-make feature, to prevent signal distortion
during the transferring of a signal from one channel to
another. The device has an excellent total harmonic
distortion (THD) performance and consumes very low
power. These features make this device suitable for
portable audio applications.
Applications
D Cell Phones
D PDAs
D Portable Instrumentation
D Audio and Video Signal Routing
D Low-Voltage Data Acquisition Systems
D Communication Circuits
D Modems
D Hard Drives
D Computer Peripherals
D Wireless Terminals and Peripherals
DCT OR DCU PACKAGE
(TOP VIEW)
YEP OR YZP PACKAGE
(BOTTOM VIEW)
GND
NO2
NO1
NO0
COM
IN1
IN2
V+
Logic
Control
1
2
3
4
8
7
6
5
NO0
NO1
NO2
GND
IN1
COM
V+
IN2
Logic Control
1
2
3
4
8
7
5
6
FUNCTION TABLE
IN2
IN1
COM TO NO,
NO TO COM
L
OFF
L
H
COM = NO0
H
L
COM = NO1
H
COM = NO2
Features
D Isolation in the Power-Down Mode, V+ = 0
D Specified Break-Before-Make Switching
D Low ON-State Resistance (1 W)
D Control Inputs Are 5.5-V Tolerant
D Low Charge Injection
D Excellent ON-State Resistance Matching
D Low Total Harmonic Distortion (THD)
D 1.65-V to 5.5-V Single-Supply Operation
D Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
D ESD Performance Tested Per JESD 22
2000-V Human-Body Model
(A114-B, Class II)
1000-V Charged-Device Model (C101)
Summary of Characteristics
V+ = 5 V, TA = 25°C
Configuration
Triple 3:1 Multiplexer/
Demultiplexer
(1
SP3T)
Number of channels
1
ON-state resistance (ron)
1.1
ON-state resistance match (
ron)
0.1
ON-state resistance flatness (ron(flat))
0.15
Turn-on/turn-off time (tON/tOFF)
40 ns/35 ns
Break-before-make time (tBBM)
1 ns
Charge injection (QC)
40 pC
Bandwidth (BW)
100 MHz
OFF isolation (OISO)
65 dB at 1 MHz
Crosstalk (XTALK)
66 dB at 1 MHz
Total harmonic distortion (THD)
0.01%
Leakagecurrent(ICOM(OFF)/INO(OFF))
±20 nA
Power-supply current (I+)
0.1
A
Package option
8-pin, DCT, DCU, YEP,
or YZP
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
www.ti.com
Copyright
2005, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
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