参数资料
| 型号： | TS80C51RA2-VIB |
| 厂商： | Atmel |
| 文件页数： | 68/84页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8BIT 256BYTE 40MHZ 44PLCC |
| 标准包装： | 27 |
| 系列： | 80C |
| 核心处理器： | 8051 |
| 芯体尺寸： | 8-位 |
| 速度： | 40/30MHz |
| 连通性： | UART/USART |
| 外围设备： | POR，PWM，WDT |
| 输入/输出数： | 32 |
| 程序存储器类型： | ROMless |
| RAM 容量： | 256 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 4.5 V ~ 5.5 V |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-LCC（J 形引线） |
| 包装： | 管件 |
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dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04, AND dsPIC33FJ128GPX02/X04
DS70292G-page 72
2007-2012 Microchip Technology Inc.
5.2
RTSP Operation
The dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/
X04, and dsPIC33FJ128GPX02/X04 Flash program
memory array is organized into rows of 64 instructions
or 192 bytes. RTSP allows the user application to erase
a page of memory, which consists of eight rows (512
instructions) at a time, and to program one row or one
word at a time. Table 30-12 shows typical erase and
programming times. The 8-row erase pages and single
row write rows are edge-aligned from the beginning of
program memory, on boundaries of 1536 bytes and
192 bytes, respectively.
The program memory implements holding buffers that
can contain 64 instructions of programming data. Prior
to the actual programming operation, the write data
must be loaded into the buffers sequentially. The
instruction words loaded must always be from a group
of 64 boundary.
The basic sequence for RTSP programming is to set up
a Table Pointer, then do a series of TBLWT instructions
to load the buffers. Programming is performed by
setting the control bits in the NVMCON register. A total
of 64 TBLWTL and TBLWTH instructions are required
to load the instructions.
All of the table write operations are single-word writes
(two instruction cycles) because only the buffers are
written. A programming cycle is required for
programming each row.
5.3
Programming Operations
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode.
The
processor stalls (waits)
until
the
programming operation is finished.
The programming time depends on the FRC accuracy
(see Table 30-19) and the value of the FRC Oscillator
Tuning register (see Register 9-4). Use the formula in
Equation 5-1 to calculate the minimum and maximum
values for the Row Write Time, Page Erase Time and
Word Write Cycle Time parameters (see Table 30-12).
EQUATION 5-1:
PROGRAMMING TIME
For example, if the device is operating at +125°C,
the FRC accuracy will be ±5%. If the TUN<5:0> bits
(see Register 9-4) are set to ‘b111111, the
minimum row write time is equal to Equation 5-2.
EQUATION 5-2:
MINIMUM ROW WRITE
TIME
The maximum row write time is equal to Equation 5-3.
EQUATION 5-3:
MAXIMUM ROW WRITE
TIME
Setting the WR bit (NVMCON<15>) starts the
operation, and the WR bit is automatically cleared
when the operation is finished.
5.4
Control Registers
Two SFRs are used to read and write the program
Flash memory: NVMCON and NVMKEY.
The NVMCON register (Register 5-1) controls which
blocks are to be erased, which memory type is to be
programmed and the start of the programming cycle.
NVMKEY (Register 5-2) is a write-only register that is
used for write protection. To start a programming or
erase sequence, the user application must consecu-
tively write 0x55 and 0xAA to the NVMKEY register.
Refer to Section 5.3 “Programming Operations” for
further details.
5.5
Flash Resources
Many useful resources related to Flash memory are
provided on the main product page of the Microchip
web site for the devices listed in this data sheet. This
product page, which can be accessed using this link,
contains the latest updates and additional information.
5.5.1
KEY RESOURCES
Section 5. “Flash Programming” (DS70191)
Code Samples
Application Notes
Software Libraries
Webinars
All related dsPIC33F/PIC24H Family Reference
Manuals Sections
Development Tools
T
7.37 MHz
FRC Accuracy
()%
FRC Tuning
()%
×
----------------------------------------------------------------------------------------------------------------------------
Note:
In the event you are not able to access the
product page using the link above, enter
this URL in your browser:
TRW
11064 Cycles
7.37 MHz
10.05
+
()
1 0.00375
–
()
×
------------------------------------------------------------------------------------------------ 1.435ms
=
TRW
11064 Cycles
7.37 MHz
10.05
–
()
1 0.00375
–
()
×
------------------------------------------------------------------------------------------------ 1.586ms
=
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TS80C51RA2-VIBB | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:High Performance 8-bit Microcontrollers |
| TS80C51RA2-VIBD | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:High Performance 8-bit Microcontrollers |
| TS80C51RA2-VIBR | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:High Performance 8-bit Microcontrollers |
| TS80C51RA2-VIE | 功能描述:IC MCU 8BIT 256BYTE 40MHZ 44VQFP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:80C 标准包装:1,500 系列:AVR® ATtiny 核心处理器:AVR 芯体尺寸:8-位 速度:16MHz 连通性:I²C，LIN，SPI，UART/USART，USI 外围设备:欠压检测/复位，POR，PWM，温度传感器，WDT 输入/输出数:16 程序存储器容量:8KB（4K x 16） 程序存储器类型:闪存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 5.5 V 数据转换器:A/D 11x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 包装:带卷 (TR) |
| TS80C51RA2-VIEB | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:High Performance 8-bit Microcontrollers |
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