参数资料
型号: TSA5512T/C3
厂商: NXP SEMICONDUCTORS
元件分类: PLL合成/DDS/VCOs
英文描述: PLL FREQUENCY SYNTHESIZER, 1300 MHz, PDSO16
封装: PLASTIC, SOT-109A, SO-16
文件页数: 3/21页
文件大小: 214K
代理商: TSA5512T/C3
October 1992
11
Philips Semiconductors
Product specication
1.3 GHz Bidirectional I2C-bus controlled
synthesizer
TSA5511
Notes to the characteristics
1. When a port is active, the collector voltage must not exceed 6 V.
2. Measured with a single open-collector port active.
SCL and SDA inputs
VIH
HIGH level input voltage
3.0
5.5
V
VIL
LOW level input voltage
1.5
V
IIH
HIGH level input current
VIH = 5 V; VCC = 0 V
10
A
VIH = 5 V; VCC = 5 V
10
A
IIL
LOW level input current
VIL = 0 V; VCC = 0 V
10
A
VIL = 0 V; VCC = 5 V
10
A
Output SDA (pin 4; open collector)
ILO
output leakage current
VO = 5.5 V
10
A
VO
output voltage
IO = 3 mA
0.4
V
Charge-pump output PD (pin 1)
IOH
HIGH level output current
(absolute value)
CP = 1
90
220
300
A
IOL
LOW level output current
(absolute value)
CP = 0
22
50
75
A
V1
output voltage
in-lock
1.5
2.5
V
I1leak
off-state leakage current
T0 = 1
5
5nA
Operational amplier output UD (test mode T0 = 1)
V18
output voltage
VIL = 0 V
100
mV
V18
output voltage when
switched-off
OS = 1; VIL = 2 V
200
mV
G
operational amplier current
gain;
I18/(I1 - I1leak)
OS = 0; VIL = 2 V;
I18 = 10 A
2000
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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