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参数资料
| 型号： | TSAL5100 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package |
| 中文描述： | 砷化镓/红外发光二极管的GaAIAs呢？5毫米（翻译- 13 / 4）包装 |
| 文件页数： | 1/5页 |
| 文件大小： | 82K |
| 代理商： | TSAL5100 |
TSAL5100
Vishay Telefunken
1 (5)
Rev. 1, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81007
GaAs/GaAlAs IR Emitting Diode in 5 mm (T–1 )
Package
Description
TSAL5100 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
Extra high radiant power and radiant intensity
High reliability
Low forward voltage
Suitable for high pulse current operation
Standard T–1 ( 5 mm) package
Angle of half intensity
=
±
10
Peak wavelength
p
= 940 nm
Good spectral matching to Si photodetectors
96 11505
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
C
C
C
C
K/W
t
p
/T = 0.5, t
p
= 100 s
t
p
= 100 s
t
5sec, 2 mm from case
相关PDF资料 |
PDF描述 |
|---|---|
| TSAL5300-FSZ | High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs |
| TSAL5300-GSZ | High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs |
| TSAL5300 | GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package |
| TSAL7200 | Plug-In Relay; Contacts:DPDT; Coil Voltage AC Max:24V; Coil Resistance:472ohm; Relay Terminals:8-Pin Octal; Relay Mounting:Plug-In; Contact Rating:10A at 240V; Leaded Process Compatible:No; Mounting Type:Plug In |
| TSAL7300 | Plug-In Relay; Contacts:3PDT; Coil Voltage AC Max:120V; Coil Resistance:1700ohm; Relay Options:Indicator Lamp; Relay Terminals:11-Pin Octal; Relay Mounting:Plug-In; Contact Carrying Power:1.2W; Contact Rating:10A at 28V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TSAL5100 | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
| TSAL5100_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs |
| TSAL5100_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs |
| TSAL5300 | 功能描述:红外发射源 High Power 940nm 5 Volt 35mW 22 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSAL5300_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs |
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