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参数资料
| 型号： | TSDF12830YS |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 2 CHANNEL, VIDEO AMPLIFIER, PDSO6 |
| 封装： | PLASTIC, SOT-363, 6 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 265K |
| 代理商： | TSDF12830YS |
TSDF12830YS
Document Number 85171
Rev. 1.2, 02-May-05
Vishay Semiconductors
www.vishay.com
3
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 3, 2, 5) which is optimized for VHF applications
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Gate 1 - source breakdown
voltage
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS
710
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS
710
V
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
50
μA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
20
nA
Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,
Gate 1 = nc
IDSP
813
17
mA
Gate 2 - source cut-off voltage
VDS = VRG1 = 5 V, Gate 1 = nc,
ID = 20 μA
VG2S(OFF)
0.3
1.2
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown
voltage
ID = 10 μA, VG2S = VG1S = 0
V(BR)DSS
15
V
Gate 1 - source breakdown
voltage
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS
710
V
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS
710
V
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
20
nA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
20
nA
Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,
RG1 = 100 kΩ
IDSO
812
17
mA
Gate 1 - source cut-off voltage
VDS = 5 V, VG2S = 4, ID = 20 μAVG1S(OFF)
0.3
1.0
V
Gate 2 - source cut-off voltage
VDS = VRG1 = 5 V, RG1 =100 kΩ,
ID = 20 μA
VG2S(OFF)
0.3
1.2
V
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