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参数资料
| 型号： | TSDF2005W |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | 25 GHz Silicon NPN Planar RF Transistor |
| 中文描述： | 25 GHz的射频硅NPN平面晶体管 |
| 文件页数： | 2/5页 |
| 文件大小： | 57K |
| 代理商： | TSDF2005W |
TSDF2005W
Vishay Semiconductors
www.vishay.com
2 (4)
Rev. 3, 02–May–02
Document Number 85085
Electrical DC Characteristics
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 5 V, V
BE
= 0
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 5 mA, I
B
= 0.5 mA
V
CE
= 2 V, I
C
= 20 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min.
Typ.
Max.
100
100
1
Unit
μ
A
nA
μ
A
V
V
3.5
0.1
100
0.25
150
50
Electrical AC Characteristics
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
F
Min.
Typ.
25
0.05
0.3
0.3
1.2
Max.
Unit
GHz
pF
pF
pF
dB
Transition frequency
Collector-base capacitance
Collector-emitter capacitance V
CE
= 2 V, f = 1 MHz
Emitter-base capacitance
Noise figure
V
CE
= 2 V, I
C
= 10 mA, f = 1 GHz
V
CB
= 2 V, f = 1 MHz
0.08
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 2 V, I
C
= 2 mA,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA,
Z
S
= Z
L
= 50
, f = 2 GHz
V
CE
= 2 V, I
C
= 10 mA,
Z
S
= Z
L
= 50
, f = 2 GHz
V
CE
= 2 V, I
C
= 10 mA,
Z
S
= Z
L
= 50
, f = 2 GHz
Power gain,
maximum stable gain
Transducer gain
G
pe
= G
ms
*)
21
dB
| S
21e
|
2
14
17
dB
Third order intercept point
at output
1 dB compression point
IP
3
15
dBm
P
–1dB
5
dBm
*) G
ms
= | S
21e
/S
12e
|
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|---|---|
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