- 您现在的位置：买卖IC网 > PDF目录385019 > TSFF5400 (Vishay Intertechnology,Inc.) High Speed IR Emitting Diode in ? mm (T-13/4) Package PDF资料下载
参数资料
| 型号： | TSFF5400 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed IR Emitting Diode in ? mm (T-13/4) Package |
| 中文描述： | 高速红外发光二极管？毫米（翻译- 13 / 4）包装 |
| 文件页数： | 2/6页 |
| 文件大小： | 86K |
| 代理商： | TSFF5400 |
TSFF5400
Vishay Telefunken
2 (6)
Rev. 5, 29-Jun-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81016
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 s
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
Min
Typ
1.45
2.5
–2.4
Max
1.6
3.0
Unit
V
V
mV/K
A
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
10
160
60
600
40
–0.5
±
22
870
40
0.2
10
10
35
35
350
Radiant Power
Temp. Coefficient of
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
p
Rise Time
Fall Time
Cut–Off Frequency
e
TK
e
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
p
TK
p
t
r
t
f
f
c
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
250
P
V
100
16111
R
thJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
50
100
150
200
250
I
F
100
16112
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
相关PDF资料 |
PDF描述 |
|---|---|
| TSHA620 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6200 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6201 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6202 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
| TSHA6203 | GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TSFF5410 | 功能描述:红外发射源 High Speed Emitter 5V 50mW 870nm 22 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSFF5410_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero |
| TSFF5410_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero |
| TSFF5410-ASZ | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:OPTO |
| TSFF5410-ES12 | 功能描述:LED IRLED 870NM 2-PIN T-1 3/4 RoHS:是 类别:光电元件 >> 红外发射极 系列:A850 标准包装:1,200 系列:- 电流 - DC 正向(If):100mA 辐射强度(le)最小值@正向电流:27mW/sr @ 100mA 波长:940nm 正向电压:1.6V 视角:40° 方向:顶视图 安装类型:通孔 封装/外壳:径向 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。