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参数资料
| 型号： | TSH110ILT |
| 厂商： | 意法半导体 |
| 元件分类： | 运动控制电子 |
| 英文描述： | WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS |
| 中文描述： | 宽带，低噪声运算放大器 |
| 文件页数： | 3/19页 |
| 文件大小： | 424K |
| 代理商： | TSH110ILT |
TSH110-TSH111-TSH112-TSH113-TSH114
3/19
ELECTRICAL CHARACTERISTICS
(pages 3 and 4)
Dual Supply Voltage, V
CC
=
±
2.5Volts, R*
fb
= 680
, T
amb
= 25
°
C (unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
DC PERFORMANCE
V
io
Input Offset Voltage
T
amb
T
min.
< T
amb
< T
max.
-1.5
0.3
1
5
1.4
2.5
1.9
2.5
750
3.2
3.5
2.0
mV
mV
μ
V/°C
μ
A
μ
A
μ
A
μ
A
k
mA
mA
V
io
Input Offset Voltage Drift vs. Temperature T
min.
< T
amb
< T
max.
I
ib+
Non Inverting Input Bias Current
T
amb
T
min.
< T
amb
< T
max.
T
amb
T
min.
< T
amb
< T
max.
R
L
=100
T
amb
T
min.
< T
amb
< T
max.
-10
13
I
ib-
Inverting Input Bias Current
-3
7
R
OL
Transimpedance
500
I
CC
Supply Current per Operator
4
CMR
Common Mode Rejection Ratio
(
Vic/
Vio)
Supply Voltage Rejection Ratio
(
VCC/
Vio)
Power Supply Rejection Ratio
(
VCC/
Vout)
DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTICS
56
60
dB
SVR
70
80
dB
PSR
Gain=1, Rload=3.9k
48
dB
V
oh
High Level Output Voltage
T
amb
R
L
= 100
T
min.
< T
amb
< T
max.
R
L
= 100
GND
T
amb
R
L
= 100
T
min.
< T
amb
< T
max.
R
L
= 100
T
min.
< T
amb
< T
max.
T
min.
< T
amb
< T
max.
Vout=1Vpk, Rfb*=820
//2pF
Load=100
A
VCL
=+2
A
VCL
=+2, 2V step
Load=100
1.4
2
V
1.9
V
V
ol
Low Level Output Voltage
-1.8
-1.3
V
-1.7
V
| I
sink
|
I
source
Output Sink current
Output Source current
20
18
mA
mA
BW
-3dB Bandwidth
81
MHz
SR
Slew Rate
160
230
V/
μ
s
Tr
Tf
Ov
St
G
φ
Rise Time
Fall Time
Overshoot
Settling Time @ 0.05%
Differential gain
Differential phase
for 200mV step
A
VCL
=+2, Rfb*=820
//2pF
Load=100
9
9
16
60
0.05
0.05
ns
ns
%
ns
%
°
A
VCL
=+2, R
L
=100
F=4.5MHz, V
out
=1Vpeak
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