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参数资料
| 型号： | TSH111IDT |
| 厂商： | 意法半导体 |
| 元件分类： | 运动控制电子 |
| 英文描述： | WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS |
| 中文描述： | 宽带，低噪声运算放大器 |
| 文件页数： | 16/19页 |
| 文件大小： | 424K |
| 代理商： | TSH111IDT |
TSH110-TSH111-TSH112-TSH113-TSH114
16/19
(fig.38):
Input / Output Isolation vs. Frequency..
Choice of the Feedback Circuit
The TSH11x is a serie of current feedback
amplifiers. For a current feedback structure the
bandwidth depends on the value of the feedback
components and the value of supply voltage.
A good choice of these components is necessary
to achieve the gain flatness and the stability.
The following table shows the typical -3dB
bandwidth and 0.1dB bandwidth assuming
different gains and power supply on 100
load.
Please see also the Closed Loop Gain vs.
Frequency curves on page 8 of the datasheet.
(fig.39):
Non-inverting and Inverting Implementation.
.
(tab.1):
Closed-loop Gain and Feedback Components.
Inverting Amplifier Biasing
In this case a resistance (R on fig.40) is necessary
to achieve a good input biasing.
This resistance is calculated by assuming the
negative and positive input bias current. The aim
is to make the compensation of the offset bias
current which could affect the input offset voltage
and the output DC component.
Assuming Ib-, Ib+, R
in
, R
fb
and a zero volt output,
the resistance R comes : R = R
in
// R
fb
.
(fig.40):
Compensation of the Input Bias Current.
.
0.01
0.1
1
10
100
-120
-100
-80
-60
-40
-20
0
Standby mode
I
Frequency (MHz)
+
_
R
G
50
Output
49.9
R
fb
C
fb
Input
Gain = 1+ R
fb /
R
G
+
_
R
50
Output
49.9
R
fb
C
fb
Gain = - R
fb /
R
in
R
in
Input
Non-Inverting
Inverting
V
CC
(V)
Gain
R
fb
(
)
C
fb
(pF)
-3dB
Bw
(MHz)
0.1dB
Bw
(MHz)
±6
+10
510
-
46
14
-10
510
-
42
13
+2
680
2
105
50
-2
680
2
90
40
+1
2.2k
2
170
30
-1
2.2k
2
110
20
±2.5
+10
510
-
37
13
-10
510
-
36
12
+2
680
2
93
25
-2
680
2
86
30
+1
2.2k
2
130
50
-1
2.2k
2
100
18
+
_
R
Load
Output
R
fb
R
in
Ib-
Ib+
Vcc+
Vcc-
相关PDF资料 |
PDF描述 |
|---|---|
| TSH111IPT | WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS |
| TSH112ID | WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS |
| TSH112IDT | WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS |
| TSH112IPT | WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS |
| TSH113 | WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TSH111IPT | 功能描述:运算放大器 - 运放 Single Widebnd Lo No RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| TSH112 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Wide band low noise operational amplifiers |
| TSH-112-01-F-D | 制造商:Samtec Inc 功能描述:CONN SHRD HDR HDR 24 POS 2MM SLDR ST TH - Bulk |
| TSH-112-01-F-DH | 制造商:Samtec Inc 功能描述:CONN SHRD HDR HDR 24 POS 2MM SLDR RA SMD - Bulk |
| TSH-112-01-F-DV | 制造商:Samtec Inc 功能描述:2MM HORIZONTAL MOUNT TERMINAL STRIP - Bulk |
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