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参数资料
| 型号： | TSHF5210 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Infrared Emitting Diode in T-13/4 Package |
| 中文描述： | 高速红外发光二极管在T - 13 / 4包 |
| 文件页数： | 1/6页 |
| 文件大小： | 123K |
| 代理商： | TSHF5210 |
TSHF5210
Vishay Semiconductors
Document Number 81313
Rev. 1.1, 30-Oct-06
www.vishay.com
1
94
8
390
e2
High Speed Infrared Emitting Diode in T-1 Package
Description
TSHF5210 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology, molded in a
clear, untinted plastic package.
TSHF5210 combines high speed with high radiant
power at wavelength of 890 nm.
Features
High modulation bandwidth
Extra high radiant power and radiant
intensity
Low forward voltage
Suitable for high pulse current operation
Standard package T-1 (
5 mm)
Angle of half intensity
= ± 10°
Peak wavelength
λ
p
= 890 nm
High reliability
Good spectral matching to Si photodetectors
Lead (Pb)-free component
Component in accordance with RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared high speed remote control and free air data
transmission systems with high modulation frequen-
cies or high data transmission rate requirements.
TSHF5210 is ideal for the design of transmission sys-
tems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK - coded,
450 kHz or 1.3 MHz).
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Part
Remarks
TSHF5210
MOQ: 4000 pcs
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
Unit
V
Forward Current
100
mA
Peak Forward Current
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
200
mA
Surge Forward Current
1.5
A
Power Dissipation
180
mW
Junction Temperature
100
°C
Operating Temperature Range
- 40 to + 85
°C
Storage Temperature Range
- 40 to + 100
°C
Soldering Temperature
t
≤
5 sec, 2 mm from case
260
°C
Thermal Resistance Junction/
Ambient
270
K/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TSHF5210_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero |
| TSHF5210_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero |
| TSHF5210-AS12Z | 制造商:Vishay Semiconductors 功能描述: |
| TSHF5210-ES21 | 制造商:Vishay Intertechnologies 功能描述:890 nm 100 mA 10 T-1 3/4 Through Hole High Speed Infrared Emitting Diode |
| TSHF5400 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed IR Emitting Diode in ?5 mm (T-13/4) Package |
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