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参数资料
| 型号： | TSHF5410 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Speed Infrared Emitting Diode in T-1 3/4 Package |
| 中文描述： | 高速红外发光二极管在T - 1 3 / 4包 |
| 文件页数： | 3/6页 |
| 文件大小： | 122K |
| 代理商： | TSHF5410 |
TSHF5410
Vishay Semiconductors
Document Number 81303
Rev. 1.1, 26-Oct-06
www.vishay.com
3
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Radiant Intensity vs. Forward Current
100
1000
0.01
0.1
t
P
- P
u
lse D
u
ration (ms)
1.0
10
100
16031
t
P
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
am
b
< 50°
I
F
w
a
u
r
1
88
73
I
F
w
a
u
r
1000
100
10
1
V
F
- For
w
ard
V
oltage (
V
)
0
2
4
t
P
= 100
μ
s
t
P
/T = 0.001
1
3
0.1
1.0
10.0
100.0
1000.0
1
10
100
1000
1
8
220
I
F
- For
w
ard C
u
rrent (mA)
I
e
W
/
Figure 6. Radiant Power vs. Forward Current
Figure 7. Relative Radiant Power vs. Wavelength
Figure 8. Relative Radiant Intensity vs. Angular Displacement
0.1
1.0
10.0
100.0
1000.0
1
1
100
0
1000
16971
I
F
- For
w
ard C
u
rrent (mA)
-
w
e
W
)
e
8
00
900
λ
-
W
a
v
elength (nm)
1000
200
8
2
0
0.25
0.5
0.75
1.0
1.25
-
v
e
w
e
e
Φ
I
e
v
e
94
888
3
0.6
0.9
0.
8
0°
30°
10°
20°
40°
50°
60°
70°
8
0°
0.7
1.0
0.6
0.4
0.2
0
0.2
0.4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TSHF5410_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero |
| TSHF5410_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero |
| TSHF5410AS21Z | 制造商:Vishay Semiconductors 功能描述: |
| TSHF5410-ES21 | 制造商:Vishay Angstrohm 功能描述:LED IrLED 890nm 2-Pin T-1 3/4 Bulk 制造商:Vishay Semiconductors 功能描述:IR EMITTER DH 890NM 5MM 20DEG -E2 - Tape and Reel 制造商:Vishay 功能描述:LED IrLED 890nm 2-Pin T-1 3/4 Bulk |
| TSHF6210 | 功能描述:红外发射源 IR EMITTER DH 890NM 5MM 10DEG RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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