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参数资料
| 型号： | TSKS5400 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | GaAs Infrared Emitting Diode in Side View Package |
| 中文描述： | 砷化镓红外发光二极管在侧包 |
| 文件页数： | 3/5页 |
| 文件大小： | 91K |
| 代理商： | TSKS5400 |
TSKS5400
Vishay Telefunken
3 (5)
Rev. A7, 15-Dez-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 83780
94 7913 e
10
3
10
1
I
F
– Forward Current ( mA )
10
2
10
4
10
0
0.01
0.1
1
100
10
I
e
tp/T = 0.001
tp = 100 s
Figure 5. Radiant Intensity vs. Forward Current
0.1
1.0
10.0
100.0
1
10
100
1000
13718
I
F
– Forward Current ( mA )
–
e
Figure 6. Radiant Power vs. Forward Current
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
–45 –30 –15
0
15
30
45
60
75
90
T
amb
– Ambient Temperature (
°
C )
14348
I
e
I
F
= 10 mA
Figure 7. Relative Radiant Intensity vs.
Ambient Temperature
900
950
0
0.25
0.5
0.75
1.0
1.25
– Wavelength ( nm )
1000
94 7994 e
–
e
I
F
= 100 mA
Figure 8. Relative Radiant Power vs. Wavelength
0.4
0.2
0
0.2
0.4
I
e
0.6
14349
0.6
0.9
0.8
0
°
30
°
10
°
20
°
40
°
50
°
60
°
70
°
80
°
0.7
1.0
Figure 9. Relative Radiant Intensity vs.
Angular Displacement
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TSKS5400_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| TSKS5400-ASZ | 制造商:Vishay Semiconductors 功能描述:IR-EM-SIDE VIEW/ 950NM 30 DEG - Ammo Pack |
| TSKS5400-FSZ | 功能描述:红外发射源 6V 10mW 950nm 30 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| TSKS5400-FSZ | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
| TSKS5400S | 功能描述:红外发射源 6V 10mW 950nm 30 Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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