参数资料
型号: TSL14SM-LF
厂商: AMS-TAOS USA Inc
文件页数: 4/13页
文件大小: 620K
描述: IC SENSOR LIGHT-VOLT SIDELK SMD
标准包装: 1
系列: *
其它名称: TSL14-SM-LFDKR
TSL12S, TSL13S, TSL14S
LIGHT-TO-VOLTAGE CONVERTERS
TAOS051E  SEPTEMBER 2007
3
The LUMENOLOGY r Company
r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
Electrical Characteristics at V
DD
 = 5 V, T
A
 = 25?/SPAN>C, ?/SPAN>
p
 = 640 nm, R
L
 = 10 k?/SPAN> (unless otherwise noted)
(see Notes 3, 4, 5)
TSL12S
TSL13S
TSL14S
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
V
OM
Maximum output voltage
4.6
4.9
4.6
4.9
4.6
4.9
V
E
e
 = 8 糤/cm
2
1.5
2
2.5
E
e
 = 31 糤/cm
2
1.5
2
2.5
E
e
 = 120 糤/cm
2
1.5
2
2.5
V
O
Output voltage
E
e
 = 16 糤/cm
2
4
V
E
e
 = 62 糤/cm
2
4
E
e
 = 240 糤/cm
2
4
R
e
Irradiance responsivity
Note 6
248
64
16
mV/
(糤/
cm
2
)
V
OS
Extrapolated offset
voltage
Note 6
0.02
0.03
0.08
0.02
0.03
0.08
0.02
0.03
0.08
V
V
d
Dark voltage
E
e
 = 0
0
0.08
0
0.08
0
0.08
V
E
e
 = 8 糤/cm
2
1.1
1.7
I
D
Supply current
E
e
 = 31 糤/cm
2
1.1
1.7
mA
D
 
E
e
 = 120 糤/cm
2
1.1
1.7
NOTES:  3.  Measurements are made with R
L
 = 10 k?between output and ground.
4.  Optical measurements are made using small-angle incident radiation from an LED optical source.
5.  The 640 nm input irradiance E
e
 is supplied by an AlInGaP LED with peak wavelength ?/DIV>
p
 = 640 nm.
6.  Irradiance responsivity is characterized over the range V
O
 = 0.2 to 4 V. The best-fit straight line of Output Voltage V
O
 versus
irradiance E
e
 over this range may have a positive or negative extrapolated V
O
 value for E
e
 = 0. For low irradiance values, the output
voltage V
O
 versus irradiance E
e
 characteristic is non linear with a deviation toward V
O
 = 0, E
e
 = 0 origin from the best-fit straight
line referenced above.
Dynamic Characteristics at V
DD
 = 5 V, T
A
 = 25?/SPAN>C, ?/SPAN>
p
 = 640 nm, R
L
 = 10 k?/SPAN> (unless otherwise noted)
(see Figure 1)
TSL12S
TSL13S
TSL14S
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
Output pulse delay
Min V
O
 = 0 V; Peak V
O
 = 2 V
13
1.7
0.9
t
dr
time for rising edge
(0% to 10%)
Min V
O
 = 0.5 V; Peak V
O
 = 2 V
2.3
1.2
0.6
Output pulse rise time
Min V
O
 = 0 V; Peak V
O
 = 2 V
20
7.2
2.6
t
r
 
     
(10% to 90%)
Min V
O
 = 0.5 V; Peak V
O
 = 2 V
10
6.5
2.9
Output pulse delay
Min V
O
 = 0 V; Peak V
O
 = 2 V
2.3
1.2
0.8
t
df
time for falling edge
(100% to 90%)
Min V
O
 = 0.5 V; Peak V
O
 = 2 V
2.2
1.1
0.7
Output pulse fall time
Min V
O
 = 0 V; Peak V
O
 = 2 V
10
6.8
2.9
t
f
u pu pu se a me
(90% to 10%)
Min V
O
 = 0.5 V; Peak V
O
 = 2 V
9
6.4
2.8
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