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参数资料
| 型号： | TSM4426CSRL |
| 厂商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V Dual N-Channel MOSFET |
| 中文描述： | 20V的双N沟道MOSFET |
| 文件页数： | 2/6页 |
| 文件大小： | 327K |
| 代理商： | TSM4426CSRL |
TSM4426
20V Dual N-Channel MOSFET
Electrical Specifications
Parameter
2/6
Version: A07
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250uA
V
GS
= ±12V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
V
DS
=5V, V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 8.0A
V
GS
= 2.5V, I
D
= 6.0A
V
DS
= 10V, I
D
= 6A
I
S
= 1.7A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
20
0.6
--
--
30
--
--
--
--
--
--
--
--
--
19
25
30
0.7
--
--
V
V
nA
uA
A
±100
1.0
--
25
35
--
1.2
Drain-Source On-State Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤
300
μ
S, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
g
fs
V
SD
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
4.86
0.92
1.4
562
106
75
--
--
--
--
--
--
V
DS
= 10V, I
D
= 8A,
V
GS
= 4.5V
nC
V
DS
= 8V, V
GS
= 0V,
f = 1.0MHz
pF
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
8.1
9.95
21.85
5.35
--
--
--
--
V
DD
= 10V, R
L
= 10
Ω
,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
Ω
nS
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