参数资料
型号: TSM5NS50CP
厂商: Taiwan Semiconductor Co., Ltd.
英文描述: 500V N-Channel Power MOSFET
中文描述: 500V N沟道功率MOSFET
文件页数: 1/6页
文件大小: 292K
代理商: TSM5NS50CP
TSM2N7002
60V N-Channel MOSFET
1/6
Version: A07
SOT-23
Features
Fast Switching Speed
Low Input and Output Leakage
Application
Direct Logic-Level Interface: TTL/CMOS
Solid-State Relays
Ordering Information
Part No.
TSM2N7002CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
300
mA
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
I
DM
I
S
800
mA
300
mA
Ta = 25
o
C
350
Maximum Power Dissipation
Ta = 75
o
C
P
D
220
mW
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
-55 to +150
o
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
T
L
5
S
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
5 sec.
R
JA
357
o
C/W
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(mA)
7.5 @ V
GS
= 10V
300
60
7.5 @ V
GS
= 4.5V
200
Block Diagram
N-Channel MOSFET
Pin Definition:
1. Gate
2. Source
3. Drain
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