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参数资料
| 型号： | TSOP59230ES1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电元器件 |
| 英文描述： | LOGIC OUTPUT PHOTO DETECTOR |
| 封装： | LEAD FREE, MINIATURE, PLASTIC PACKAGE-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 143K |
| 代理商： | TSOP59230ES1 |
www.vishay.com
2
Document Number 81369
Rev. 1.0, 13-Oct-06
TSOP592..ES1
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Supply Voltage
(Pin 2)
VS
- 0.3 to + 6.0
V
Supply Current
(Pin 2)
IS
5mA
Output Voltage
(Pin 1)
VO
- 0.3 to + (Vs + 0.3)
V
Output Current
(Pin 1)
IO
10
mA
Junction Temperature
Tj
100
°C
Storage Temperature Range
Tstg
- 25 to + 85
°C
Operating Temperature Range
Tamb
- 25 to + 85
°C
Power Consumption
(Tamb ≤ 85 °C)
Ptot
50
mW
Soldering Temperature
t
≤ 10 s, 1 mm from case
Tsd
260
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Supply Current (Pin 3)
VS = 5 V, Ev = 0
ISD
0.8
1.2
1.5
mA
VS = 5 V, Ev = 40 klx, sunlight
ISH
1.5
mA
Supply Voltage
VS
4.5
5.5
V
Transmission Distance
Ev = 0, test signal see fig. 1,
IR diode TSAL6200,
IF = 400 mA
d35
m
Output Voltage Low (Pin 1)
IOSL = 0.5 mA, Ee = 0.7 mW/m
2,
test signal see fig. 1
VOSL
250
mV
Minimum Irradiance
(30 - 40 kHz)
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min
0.35
0.5
mW/m2
Minimum Irradiance (56 kHz)
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee min
0.4
0.6
mW/m2
Maximum Irradiance
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee max
30
W/m2
Directivity
Angle of half transmission
distance
1/2
± 45
deg
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