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参数资料
| 型号： | TT251N16KOF |
| 元件分类： | 晶闸管 |
| 英文描述： | 410 A, 1600 V, SCR |
| 封装： | MODULE-7 |
| 文件页数： | 1/13页 |
| 文件大小： | 414K |
| 代理商： | TT251N16KOF |
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT251N
BIP AC / Warstein,den 26.09.85 Tscharn
A10 /85
1/12
Seite/page
------------------------------------------------------------------------------------------------------------------------------Kenndaten
Elektrische Eigenschaften
TT251N
TD251N
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Tvj = -40°C... Tvj max
VDRM,VRRM 1200
1600
1400
1800
V
Vorwrts-Stospitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = -40°C... Tvj max
VDSM
1200
1600
1400
1800
V
Rückwrts-Stospitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
1300
1700
1500
1900
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
ITRMSM
410 A
Dauergrenzstrom
average on-state current
TC = 85°C
TC = 82°C
ITAVM
250
261
A
Stostrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
ITSM
9100
8000
A
Grenzlastintegral
It-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
It
414000
320000
As
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 747-6
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/s
(diT/dt)cr
250 A/s
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
6.Kennbuchstabe / 6
th letter F
(dvD/dt)cr
1000 V/s
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
Tvj = Tvj max , iT = 800 A
vT
max.
1,4 V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
0,8 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
0,7 m
Zündstrom
gate trigger current
Tvj = 25°C, vD = 6 V
IGT
max.
200 mA
Zündspannung
gate trigger voltage
Tvj = 25°C, vD = 6 V
VGT
max.
2V
Nicht zündender Steuerstrom
gate non-trigger current
Tvj = Tvj max , vD = 6 V
Tvj = Tvj max , vD = 0,5 VDRM
IGD
max.
10
5
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
Tvj = Tvj max , vD = 0,5 VDRM
VGD
max.
0,2 V
Haltestrom
holding current
Tvj = 25°C, vD = 6 V, RA = 5
IH
max.
300 mA
Einraststrom
latching current
Tvj = 25°C, vD = 6 V, RGK ≥ 10
iGM = 1 A, diG/dt = 1 A/s, tg = 20 s
IL
max.
1200 mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse current
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
max.
50 mA
Zündverzug
gate controlled delay time
DIN IEC 747-6
Tvj = 25 °C,iGM = 1 A, diG/dt = 1 A/s
tgd
max.
3 s
prepared by: C.Drilling
date of publication:
23.09.02
approved by: J. Novotny
revision:
1
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相关代理商/技术参数 |
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|---|---|
| TT251N16KOF-A | 功能描述:SCR PCT 1600V 250A RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TT251N16KOF-K | 功能描述:SCR PCT 2600V 250A RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TT251N17KOF | 制造商:n/a 功能描述:Power Module |
| TT251N18KOF | 功能描述:分立半导体模块 1800V 410A DUAL RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
| TT251N18NOF | 功能描述:分立半导体模块 1800V 410A DUAL RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: |
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