参数资料
| 型号： | TV06B180JB-HF |
| 厂商： | Comchip Technology |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | TVS 600W 18V BIDIRECT 5% SMB |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 18V |
| 电压 - 击穿： | 20V |
| 功率（瓦特）： | 600W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 带卷 (TR) |
SMD Transient Voltage Suppressor
Rating and Characteristics Curves (TV06B5V0-HF Thru. TV06B171-HF)
100
Fig.1 Reverse Characteristics
Mounted on 5mm×5mm
copper pads
140
Fig.2 Pulse Derating Curve
Mounted on 5mm×5mm
copper pads
120
100
10
80
60
1
40
Non-repetitive pulse
0.1
waveform shown in
fig.3, T A =25°C
20
0
0.1
1
10
100
1000
10000
0
25
50
75
100
125
150
175
125
t d , Pulse Width ( μ S)
Fig.3 Pulse Waveform
10000
T A , Ambient Temperature (°C)
Fig.4 Typical Junction Capacitance
for Uni-directioinal Devices
tr=10μS
Pulse width (td) is defined as
the point where the peak
Measured at
zero bias
current decay to 50% of Ipp
100
Peak value, I PPM
1000
75
Half value, I PP /2
Measured at
standard-off
50
10/1000 μ S waveform
voltage,V WM
25
0
td
as defined by R.E.A.
100
10
T J =25°C
f=1MHz
V sig =50mVp-p
0
1
2
3
4
1
10
100
200
t, Time (mS)
Fig.5 Typical Junction Capacitance
for Bi-directional Devices
V BR , Breadown Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surge Current (Uni-
10000
1000
100
Measured at
standard-off
voltage,V WM
Measured at
zero bias
100
50
Directional Devices Only)
8.3mS single half
10
T J =25°C
f=1MHz
V sig =50mVp-p
10
sine-wave (JEDEC
method)
T J =T J Max.
1
10
100
200
1
10
100
VBR, Breakdown Voltage (V)
Number of Cycle at 60Hz
REV:A
QW-JTV02
Comchip Technology CO., LTD.
Page 4
相关PDF资料 |
PDF描述 |
|---|---|
| TV06B171JB-HF | TVS 600W 170V BIDIRECT 5% SMB |
| TV06B170JB-HF | TVS 600W 17V BIDIRECT 5% SMB |
| TV06B161JB-HF | TVS 600W 160V BIDIRECT 5% SMB |
| TV06B160JB-HF | TVS 600W 16V BIDIRECT 5% SMB |
| TV06B151JB-HF | TVS 600W 150V BIDIRECT 5% SMB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TV06B180J-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W, 18.0V,Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV06B180J-HF | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W, 18.0V,Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TV06B180K | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Transient Voltage Suppressor |
| TV06B180K(B)-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Transient Voltage Suppressor |
| TV06B180KB | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Transient Voltage Suppressor |
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