参数资料
| 型号： | TVP06B120A-G |
| 厂商： | Comchip Technology |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | TVS 600W 12V UNIDIRECT SMC |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 10.2V |
| 电压 - 击穿： | 11.4V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | DO-214AA（SMB） |
| 包装： | 带卷 (TR) |
SMD Transient Voltage Suppressor
COMCHIP
SMD Diodes Specialist
TVP06B6V8-G Thru. TVP06B601-G
Breakdown Voltage: 6.8 ~ 600Volts
Power Dissipation: 600 Watts
RoHS Device
Features
SMB/DO-214AA
-Glass passivated chip.
-Low leakage.
-Uni and Bidirectional unit.
-Excellent clamping capability.
0.087(2.20)
0.077(1.96)
0.155(3.94)
0.130(3.30)
-Very fast response time.
0.191(4.85)
-RoHS compliant.
Mechanical Data
0.096(2.44)
0.171(4.35)
0.012(0.30)
0.006(0.15)
0.084(2.13)
-Case: Molded plastic, JEDEC SMB/DO-214AA .
-Epoxy: UL 94V-0 rate flame retardant.
-Terminals: solderable per MIL-STD-750,
method 2026
0.060(1.52)
0.030(0.75)
0.216(5.50)
0.201(5.10)
0.008(0.20)
0.001(0.02)
-Polarity: Cathode band denoted.
Dimensions in inches and (millimeter)
-Approx. weight: 0.108 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 O C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
Peak power dissipation on 10/1000 μ S
waveform (Note 1 )
Peak pulse current on 10/1000 μ S waveform
(Note 1)
Symbol
P PP
I PP
Value
600
See Next Table
Units
W
A
Steady state power dissipation at T L =75
O
C
P D
5.0
W
Peak forward surge current, 8.3mS single half
sine-wave uni-directional only (Note 2)
Maximum instantaneous forward voltage at
25.0A for uni-directional only (Note 3)
I FSM
V F
100
3.5/5.0
A
V
Operation junction temperature
Storage temperature range
T J
T STG
-55 to +150
-55 to +150
O
O
C
C
Note:
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25 O C per Fig.1
2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum.
3. V F <3.5V for devices of V BR <200V and V F <5.0V for devices of V BR >201V
REV:A
QW-BTV18
Page 1
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| TVP06B120CA-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W, 12V,Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TVP06B121A(CA)-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Transient Voltage Suppressor |
| TVP06B121A-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W, 120V,Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TVP06B121CA-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W, 120V,Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| TVP06B12A(CA)-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:SMD Transient Voltage Suppressor |
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