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| 型号： | TWR-S08PT60-KIT |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 13/37页 |
| 文件大小： | 0K |
| 描述： | TOWER SYSTEM KIT S08PT60 |
| 标准包装： | 1 |
| 系列： | S08 |
| 类型： | MCU |
| 适用于相关产品： | Freescale 电源塔系统 |
| 所含物品： | 4 个板，线缆，DVD |
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4. Load capacitors (C1,C2), feedback resistor (RF) and series resistor (RS) are incorporated internally when RANGE = HGO =
0.
5. This parameter is characterized and not tested on each device.
6. Proper PC board layout procedures must be followed to achieve specifications.
7. This specification applies to any time the FLL reference source or reference divider is changed, trim value changed,
DMX32 bit is changed, DRS bit is changed, or changing from FLL disabled (FBELP, FBILP) to FLL enabled (FEI, FEE,
FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running.
8. Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum fBus.
Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise
injected into the FLL circuitry via VDD and VSS and variation in crystal oscillator frequency increase the CJitter percentage
for a given interval.
XOSC
EXTAL
XTAL
Crystal or Resonator
RS
C2
RF
C1
Figure 11. Typical crystal or resonator circuit
6.2 NVM specifications
This section provides details about program/erase times and program-erase endurance for
the flash and EEPROM memories.
Table 10. Flash characteristics
C
Characteristic
Symbol
Min1
Unit4
D
Supply voltage for program/erase -40
°C to 105 °C
Vprog/erase
2.7
—
5.5
V
D
Supply voltage for read operation
VRead
2.7
—
5.5
V
D
NVM Bus frequency
fNVMBUS
1
—
25
MHz
D
NVM Operating frequency
fNVMOP
0.8
—
1.05
MHz
D
Erase Verify All Blocks
tVFYALL
—
17030
tcyc
D
Erase Verify Flash Block
tRD1BLK
—
16977
tcyc
D
Erase Verify EEPROM Block
tRD1BLK
—
843
tcyc
D
Erase Verify Flash Section
tRD1SEC
—
517
tcyc
D
Erase Verify EEPROM Section
tDRD1SEC
0.10
0.11
ms
Table continues on the next page...
Peripheral operating requirements and behaviors
MC9S08PT60 Series Data Sheet, Rev. 3, 4/2012.
20
Freescale Semiconductor, Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TWR-S08RN60-KIT | 制造商:Freescale Semiconductor 功能描述:S08RN60 Tower Kit HARDWARE ONLY |
| TWR-S08UNIV | 功能描述:开发板和工具包 - S08 / S12 TOWER UNIVERSAL RS08/S08 RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| TWR-S08UNIV-DEMO | 功能描述:开发板和工具包 - S08 / S12 TWR-S08UNIV-DEMO Kit RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| TWR-S12G128 | 功能描述:开发板和工具包 - S08 / S12 TOWER CD S12G128 RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| TWR-S12G128 | 制造商:Freescale Semiconductor 功能描述:TOWER CD S12G128 |
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