参数资料
| 型号： | TXB0102DCURG4 |
| 厂商： | Texas Instruments |
| 文件页数： | 20/20页 |
| 文件大小： | 0K |
| 描述： | IC VOLT-LVL TRANSL BI-DIR 8-US8 |
| 标准包装： | 3,000 |
| 逻辑功能： | 变换器，双向 |
| 位数： | 2 |
| 输入类型： | 逻辑 |
| 输出类型： | 逻辑 |
| 数据速率： | 100Mbps |
| 通道数： | 2 |
| 输出/通道数目： | 1 |
| 差分 - 输入:输出： | 无/无 |
| 传输延迟（最大）： | 4ns |
| 电源电压： | 1.2 V ~ 3.6 V，1.65 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VFSOP（0.091"，2.30mm 宽） |
| 供应商设备封装： | US8 |
| 包装： | 带卷 (TR) |
4k
4k
A
B
VCCA
VCCB
One
Shot
One
Shot
One
Shot
One
Shot
T1
T2
T3
T4
SCES641B – MAY 2007 – REVISED MAY 2012
PRINCIPLES OF OPERATION
Applications
The TXB0102 can be used in level-translation applications for interfacing devices or systems operating at
different interface voltages with one another.
Architecture
The TXB0102 architecture (see Figure 2) does not require a direction-control signal to control the direction of
data flow from A to B or from B to A. In a dc state, the output drivers of the TXB0101 can maintain a high or low,
but are designed to be weak, so that they can be overdriven by an external driver when data on the bus starts
flowing the opposite direction.
The output one shots detect rising or falling edges on the A or B ports. During a rising edge, the one shot turns
on the PMOS transistors (T1, T3) for a short duration, which speeds up the low-to-high transition. Similarly,
during a falling edge, the one shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up
the high-to-low transition. The typical output impedance during output transition is 70
at VCCO = 1.2 V to 1.8 V,
50
at VCCO = 1.8 V to 3.3 V, and 40 at VCCO = 3.3 V to 5 V.
Figure 2. Architecture of TXB0102 I/O Cell
Input Driver Requirements
Typical IIN vs VIN characteristics of the TXB0102 are shown in Figure 3. For proper operation, the device driving
the data I/Os of the TXB0102 must have drive strength of at least ±2 mA.
Copyright 2007–2012, Texas Instruments Incorporated
9
Product Folder Link(s): TXB0102
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TXB0102DCUT | 功能描述:转换 - 电压电平 2B Bidir Vltg-Level Translator RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
| TXB0102DCUTG4 | 功能描述:转换 - 电压电平 2B Bidir Vltg-Level Translator RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
| TXB0102YZPR | 功能描述:转换 - 电压电平 2B Bidir Vltg-Level Translator RoHS:否 制造商:Micrel 类型:CML/LVDS/LVPECL to LVCMOS/LVTTL 传播延迟时间:1.9 ns 电源电流:14 mA 电源电压-最大:3.6 V 电源电压-最小:3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MLF-8 |
| TXB0104 | 制造商:TI 制造商全称:Texas Instruments 功能描述:4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTO DIRECTION SENSING AND 【15-kV ESD PROTECTION |
| TXB0104_08 | 制造商:TI 制造商全称:Texas Instruments 功能描述:4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR WITH AUTOMATIC DIRECTION SENSING AND ±15-kV ESD PROTECTION |
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